IRFR3709Z International Rectifier, IRFR3709Z Datasheet - Page 6

• Manufacturer Part Number: IRFR3709Z
• Description: MOSFET N-CH 30V 86A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR3709Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 86A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2330pF @ 15V
• Power - Max: 79W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFR3709Z

Fig 12a. Unclamped Inductive Test Circuit
6
Fig 12b. Unclamped Inductive Waveforms
Fig 13. Gate Charge Test Circuit
I
AS
12V
V
GS
R G
20V
Same Type as D.U.T.
V
V DS
GS
Current Regulator
.2µF
t p
50KΩ
3mA
I AS
Current Sampling Resistors
D.U.T
t p
.3µF
0.01 Ω
L
I
G
D.U.T.
15V
I
V
D
(BR)DSS
DRIVER
+
-
V
+
-
DS
V DD
A
450
400
350
300
250
200
150
100
90%
V
50
10%
0
V
Fig 14a. Switching Time Test Circuit
Fig 14b. Switching Time Waveforms
DS
Fig 12c. Maximum Avalanche Energy
GS
25
Starting T J , Junction Temperature (°C)
t
d(on)
50
Duty Factor < 0.1%
Pulse Width < 1µs
V
vs. Drain Current
GS
t
75
r
V
DS
100
t
d(off)
TOP
BOTTOM 12A
125
D.U.T
www.irf.com
L
D
t
f
V
150
DD
I D
8.4A
6.6A
+
-
175