IRLR024Z International Rectifier, IRLR024Z Datasheet

MOSFET N-CH 55V 16A DPAK

IRLR024Z

Manufacturer Part Number
IRLR024Z
Description
MOSFET N-CH 55V 16A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRLR024Z

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
58 mOhm @ 9.6A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
9.9nC @ 5V
Input Capacitance (ciss) @ Vds
380pF @ 25V
Power - Max
35W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRLR024Z

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLR024Z
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Part Number:
IRLR024Z
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
IRLR024Z
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRLR024ZPBF
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Part Number:
IRLR024ZPBF
Manufacturer:
IR
Quantity:
20 000
n
n
n
n
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Specifically designed for Automotive applications, this HEXFET
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and
a wide variety of other applications.
www.irf.com
Absolute Maximum Ratings
I
I
I
P
V
E
E
I
E
T
T
Thermal Resistance
R
R
R
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AS
AR
θJC
θJA
θJA
@ T
@ T
Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
@T
(Tested )
C
C
C
= 25°C Continuous Drain Current, V
= 100°C Continuous Drain Current, V
= 25°C Power Dissipation
®
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
Ã
Parameter
Parameter
GS
GS
g
@ 10V
@ 10V
d
i
(Silicon Limited)
h
G
®
HEXFET
See Fig.12a, 12b, 15, 16
Typ.
300 (1.6mm from case )
–––
–––
–––
D
S
IRLR024Z
-55 to + 175
D-Pak
Max.
0.23
± 16
16
11
64
35
25
25
®
R
Power MOSFET
DS(on)
IRLR024Z
IRLU024Z
V
Max.
DSS
I
4.28
110
D
40
= 16A
IRLU024Z
PD - 95825A
= 58mΩ
= 55V
I-Pak
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

Related parts for IRLR024Z

IRLR024Z Summary of contents

Page 1

... GS @ 10V Parameter 95825A IRLR024Z IRLU024Z ® HEXFET Power MOSFET 55V DSS R = 58mΩ DS(on 16A D S D-Pak I-Pak IRLR024Z IRLU024Z Max. Units 0.23 W/°C ± See Fig.12a, 12b 175 °C 300 (1.6mm from case ) Typ. Max. Units ––– 4.28 – ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 10V 9.0V 7.0V 5.0V 4.5V 4.0V 10 3.5V BOTTOM 3.0V 1 3.0V ≤ 60µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = 1000 C iss C oss 100 ...

Page 5

Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE ...

Page 6

D.U 20V V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms ...

Page 7

Duty Cycle = Single Pulse 10 0.01 0.05 0.10 1 0.1 1.0E-05 1.0E-04 Fig 15. Typical Avalanche Current vs.Pulsewidth 30 TOP Single Pulse BOTTOM 1% Duty Cycle 9. ...

Page 8

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. ...

Page 9

A - 5.46 (.215) 5.21 (.205) 4 1.02 (.040 1.64 (.025) 1.52 (.060) 1.15 (.045) 3X 1.14 (.045) 2X 0.76 (.030) 2.28 (.090) 4.57 (.180) EXAMPLE: T HIS IS AN IRFR120 WIT ...

Page 10

A - 5.46 (.215) 5.21 (.205) 4 6.22 (.245) 1.52 (.060) 5.97 (.235) 1.15 (.045 2.28 (.090) 9.65 (.380) 1.91 (.075) 8.89 (.350) 1.14 (.045) 3X 0.89 (.035) 0.76 ...

Page 11

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

Page 12

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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