IRLZ44ZS International Rectifier, IRLZ44ZS Datasheet - Page 5

• Manufacturer Part Number: IRLZ44ZS
• Description: MOSFET N-CH 55V 51A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLZ44ZS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.5 mOhm @ 31A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 51A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 36nC @ 5V
• Input Capacitance (ciss) @ Vds: 1620pF @ 25V
• Power - Max: 80W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRLZ44ZS

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0.001
0.01
0.1
10
60
50
40
30
20
10
Fig 9. Maximum Drain Current Vs.
1
1E-006
0
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
0.20
0.10
0.05
0.02
Case Temperature
0.01
50
T J , Junction Temperature (°C)
SINGLE PULSE
( THERMAL RESPONSE )
75
1E-005
100
125
t 1 , Rectangular Pulse Duration (sec)
150
0.0001
175
τ
J
τ
J
τ
1
2.5
2.0
1.5
1.0
0.5
Ci= τi/Ri
τ
1
Ci τi/Ri
Fig 10. Normalized On-Resistance
-60 -40 -20 0
R
0.001
1
I D = 30A
V GS = 5.0V
R
1
τ
2
T J , Junction Temperature (°C)
R
τ
2
Vs. Temperature
2
R
2
20 40 60 80 100 120 140 160 180
R
τ
3
3
R
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
3
3
τ
C
τ
Ri (°C/W)
0.01
0.736
0.687
0.449
0.000345
0.00147
0.007058
τi (sec)
5
0.1