IRFZ48Z International Rectifier, IRFZ48Z Datasheet - Page 4

• Manufacturer Part Number: IRFZ48Z
• Description: MOSFET N-CH 55V 61A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFZ48Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 37A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 61A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 64nC @ 10V
• Input Capacitance (ciss) @ Vds: 1720pF @ 25V
• Power - Max: 91W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFZ48Z

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100
10
1
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
1
Drain-to-Source Voltage
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Forward Voltage
T J = 25°C
C oss
C rss
C iss
f = 1 MHZ
10
V GS = 0V
100
1000
12.0
10.0
100
8.0
6.0
4.0
2.0
0.0
10
Fig 8. Maximum Safe Operating Area
1
0
1
Fig 6. Typical Gate Charge vs.
I D = 37A
Tc = 25°C
Tj = 175°C
Single Pulse
Gate-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
10
Q G Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V DS = 44V
V DS = 28V
V DS = 11V
20
10
100µsec
10msec
1msec
30
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