IRF7834 International Rectifier, IRF7834 Datasheet - Page 6

• Manufacturer Part Number: IRF7834
• Description: MOSFET N-CH 30V 19A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7834

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 19A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3710pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7834

IRF7834
6
Fig 13a. Unclamped Inductive Test Circuit
Fig 13b. Unclamped Inductive Waveforms
Fig 12. On-Resistance Vs. Gate Voltage
20
16
12
8
4
0
I
AS
2.0
R G
20V
V
V DS
GS
V GS , Gate-to-Source Voltage (V)
t p
4.0
I AS
D.U.T
t p
0.01 Ω
L
6.0
T J = 125°C
T J = 25°C
15V
V
8.0
I D = 20A
(BR)DSS
DRIVER
+
-
V DD
10.0
A
100
80
60
40
20
90%
V
0
10%
V
DS
Fig 14b. Switching Time Waveforms
Fig 14a. Switching Time Test Circuit
25
GS
Fig 13c. Maximum Avalanche Energy
Starting T J , Junction Temperature (°C)
t
d(on)
50
Duty Factor < 0.1%
Pulse Width < 1µs
Vs. Drain Current
V
GS
t
r
75
V
DS
100
t
d(off)
www.irf.com
TOP
BOTTOM
D.U.T
L
t
D
f
125
V
DD
6.7A
5.9A
16A
+
I D
-
150