IRFB4215 International Rectifier, IRFB4215 Datasheet - Page 4

• Manufacturer Part Number: IRFB4215
• Description: MOSFET N-CH 60V 115A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB4215

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9 mOhm @ 54A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 115A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Input Capacitance (ciss) @ Vds: 4080pF @ 25V
• Power - Max: 270W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFB4215

4
7000
6000
5000
4000
3000
2000
1000
1000
100
0.1
10
0
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.0
1
Drain-to-Source Voltage
T = 175 C
J
V
V
DS
SD
Forward Voltage
V
C
C
C
0.5
, Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
GS
iss
rss
oss
°
=
=
=
=
0V,
C
C
C
gs
gd
ds
C oss
C iss
C rss
+ C
+ C
T = 25 C
1.0
10
J
f = 1MHz
gd ,
gd
°
C
ds
1.5
SHORTED
V
GS
= 0 V
100
2.0
10000
1000
100
0.1
10
20
16
12
Fig 8. Maximum Safe Operating Area
1
8
4
0
0
1
Fig 6. Typical Gate Charge Vs.
I =
D
Tc = 25°C
Tj = 175°C
Single Pulse
64A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
40
Q , Total Gate Charge (nC)
G
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
80
V
V
V
DS
DS
DS
= 48V
= 30V
= 12V
FOR TEST CIRCUIT
120
SEE FIGURE
10msec
100
100µsec
1msec
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160
13
1000
200