VN2222LL ON Semiconductor, VN2222LL Datasheet - Page 4

• Manufacturer Part Number: VN2222LL
• Description: MOSFET N-CH 60V 150MA TO-92
• Manufacturer: ON Semiconductor

Specifications of VN2222LL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 150mA
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Input Capacitance (ciss) @ Vds: 60pF @ 25V
• Power - Max: 400mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Gate Charge (qg) @ Vgs: -
• Other names: VN2222LLOS

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SEATING
PLANE
R
X X
1
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
A
V
H
N
G
N
P
L
C
K
B
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
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PACKAGE DIMENSIONS
SECTION X−X
http://onsemi.com
D
CASE 29−11
VN2222LL
ISSUE AL
TO−92
J
4
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
Y14.5M, 1982.
IS UNCONTROLLED.
BEYOND DIMENSION K MINIMUM.
DIM
STYLE 22:
G
A
B
C
D
H
J
K
L
N
P
R
V
PIN 1. SOURCE
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
0.135
0.115
2. GATE
3. DRAIN
MIN
−−−
INCHES
0.205
0.210
0.165
0.021
0.055
0.105
0.020
0.105
0.100
MAX
−−−
−−−
−−−
−−−
0.407
12.70
MILLIMETERS
MIN
4.45
4.32
3.18
1.15
2.42
0.39
6.35
2.04
2.93
3.43
−−−
VN2222LL/D
0.533
MAX
5.20
5.33
4.19
1.39
2.66
0.50
2.66
2.54
−−−
−−−
−−−
−−−