BSS123LT1 ON Semiconductor, BSS123LT1 Datasheet

MOSFET N-CH 100V 170MA SOT-23

BSS123LT1

Manufacturer Part Number
BSS123LT1
Description
MOSFET N-CH 100V 170MA SOT-23
Manufacturer
ON Semiconductor
Datasheet

Specifications of BSS123LT1

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6 Ohm @ 100mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
170mA
Vgs(th) (max) @ Id
2.8V @ 1mA
Input Capacitance (ciss) @ Vds
20pF @ 25V
Power - Max
225mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Gate Charge (qg) @ Vgs
-
Other names
BSS123LT1OSCT

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BSS123LT1
Power MOSFET
170 mAmps, 100 Volts
N−Channel SOT−23
Features
1. The Power Dissipation of the package may result in a lower continuous drain
2. Pulse Width v 300 ms, Duty Cycle v 2.0%.
3. FR−5 = 1.0  0.75  0.062 in.
March, 2005 − Rev. 5
MAXIMUM RATINGS
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Drain−Source Voltage
Gate−Source Voltage
Drain Current
Total Device Dissipation FR−5 Board
Thermal Resistance,
Junction and Storage Temperature
Pb−Free Packages are Available
Semiconductor Components Industries, LLC, 2005
current.
− Continuous
− Non−repetitive (t
− Continuous (Note 1)
− Pulsed (Note 2)
(Note 3) T
Derate above 25 C
Junction−to−Ambient
A
Characteristic
= 25 C
Rating
p
50 ms)
Preferred Device
Symbol
Symbol
T
V
V
R
J
V
I
P
GSM
, T
DSS
DM
I
qJA
GS
D
D
stg
−55 to +150
Value
0.17
0.68
Max
100
225
556
1.8
20
40
1
mW/ C
Unit
Unit
Vdc
Vdc
Vpk
Adc
mW
C/W
C
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
1
2
ORDERING INFORMATION
SA
M
1
3
http://onsemi.com
PIN ASSIGNMENT
R
170 mAMPS
100 VOLTS
DS(on)
Gate
1
CASE 318
STYLE 21
= Device Code
= Date Code
SOT−23
N−Channel
Drain
Publication Order Number:
3
3
2
= 6 W
Source
2
MARKING
DIAGRAM
BSS123LT1/D
SA

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BSS123LT1 Summary of contents

Page 1

... Preferred devices are recommended choices for future use and best overall value. 1 http://onsemi.com 170 mAMPS 100 VOLTS = DS(on) N−Channel MARKING DIAGRAM 3 SOT−23 SA CASE 318 STYLE Device Code M = Date Code PIN ASSIGNMENT Drain Gate Source ORDERING INFORMATION Publication Order Number: BSS123LT1/D ...

Page 2

... Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. ORDERING INFORMATION Device BSS123LT1 BSS123LT1G BSS123LT3 BSS123LT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. BSS123LT1 ( unless otherwise noted Vdc Vdc 0.28 Adc, ...

Page 3

... DRAN SOURCE VOLTAGE (VOLTS) DS Figure 1. Ohmic Region 2 200 mA D 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 −60 −20 +20 +60 T, TEMPERATURE ( C) Figure 3. Temperature versus Static Drain−Source On−Resistance BSS123LT1 7.0 8.0 9 1.0 2.0 Figure 2. Transfer Characteristics 1.2 1 ...

Page 4

... K 0.0140 0.0285 0.35 0.69 L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. BSS123LT1/D ...

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