NTP13N10 ON Semiconductor, NTP13N10 Datasheet
NTP13N10
Specifications of NTP13N10
Related parts for NTP13N10
NTP13N10 Summary of contents
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... N−Channel MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain 4 TO−220AB 13N10 CASE 221A AYWW STYLE Gate Source 2 Drain 13N10 = Device Code A = Assembly Location Y = Year WW = Work Week ORDERING INFORMATION † Package Shipping TO−220AB 50 Units/Rail TO−220AB 50 Units/Rail (Pb−Free) Publication Order Number: NTP13N10/D ...
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ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage ( Vdc 250 mAdc Temperature Coefficient (Positive) Zero Gate Voltage Collector Current ( Vdc 100 Vdc 25° ...
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7 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. ...
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Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Δt) are determined by how fast the FET input capacitance can be charged by current from the ...
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TOTAL GATE CHARGE (nC) G Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge ...
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SINGLE PULSE T = 25° μs 100 μ LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 0.1 0 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased ...
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... V 0.045 −−− 1.15 −−− Z −−− 0.080 −−− 2.04 STYLE 5: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTP13N10/D ...