MTY100N10E ON Semiconductor, MTY100N10E Datasheet
MTY100N10E
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MTY100N10E Summary of contents
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... AMPERES 100 VOLTS mΩ DS(on) N−Channel TO−264 CASE 340G Style 1 MARKING DIAGRAM & PIN ASSIGNMENT MTY100N10E LLYWW 1 3 Gate Source 2 Drain LL = Location Code Y = Year WW = Work Week ORDERING INFORMATION Package Shipping TO−264 25 Units/Rail Publication Order Number: MTY100N10E/D ...
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ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−Source Breakdown Voltage ( 250 μ Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (V = 100 Vdc Vdc 100 Vdc, V ...
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TYPICAL ELECTRICAL CHARACTERISTICS 200 160 120 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0.018 0.016 T ...
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Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Δt) are determined by how fast the FET input capacitance can be charged by current from the ...
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100 150 Q , TOTAL GATE CHARGE (nC) g Figure 8. Gate Charge versus Gate−to−Source Voltage DRAIN−TO−SOURCE DIODE CHARACTERISTICS 100 0.5 Figure ...
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SINGLE PULSE T = 25°C C 100 100 μ LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 1 0 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased ...
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... Q 3.1 3.5 0.122 0.137 R 2.15 2.35 0.085 0.093 U 6.1 6.5 0.240 0.256 W 2.8 3.2 0.110 0.125 STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MTY100N10E/D ...