NTD80N02-1G ON Semiconductor, NTD80N02-1G Datasheet

MOSFET N-CH 24V 80A DPAK-3

NTD80N02-1G

Manufacturer Part Number
NTD80N02-1G
Description
MOSFET N-CH 24V 80A DPAK-3
Manufacturer
ON Semiconductor
Datasheet
1.NTD80N02T4.pdf (8 pages)

Specifications of NTD80N02-1G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5.8 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
24V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
42nC @ 4.5V
Input Capacitance (ciss) @ Vds
2600pF @ 20V
Power - Max
75W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTD80N02-1GOS
NTD80N02
Power MOSFET
24 V, 80 A, N−Channel DPAK
power supplies, converters and power motor controls and bridge
circuits.
Features
•
Typical Applications
•
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1″ pad size,
2. When surface mounted to an FR4 board using the minimum recommended
*Chip current capability limited by package.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2010
October, 2010 − Rev. 5
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current − Continuous @ T
Drain Current
Total Power Dissipation @ T
Operating and Storage
Single Pulse Drain−to−Source Avalanche
Thermal Resistance
Maximum Lead Temperature for Soldering
Designed for low voltage, high speed switching applications in
These Devices are Pb−Free and are RoHS Compliant
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
(Cu Area 1.127 in
pad size, (Cu Area 0.412 in
Temperature Range
Energy − Starting T
(V
I
Purposes, 1/8″ from case for 10 seconds
L
DD
= 17 Apk, L = 5.0 mH, R
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
= 24 Vdc, V
− Single Pulse (t
Rating
2
GS
).
J
= 10 Vdc,
(T
= 25°C
J
= 25°C unless otherwise noted)
C
2
G
).
= 25°C
p
= 25 Ω)
= 10 ms)
C
= 25°C
Symbol
T
V
R
R
R
J
V
E
I
P
, T
DSS
DM
T
I
θJC
θJA
θJA
GS
D
AS
D
L
stg
−55 to
Value
1.65
±20
200
150
733
120
260
80*
24
75
67
1
Watts
°C/W
Unit
Vdc
Vdc
Adc
mJ
°C
°C
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
(Surface Mount)
Gate
1 2
CASE 369AA
V
(BR)DSS
STYLE 2
24 V
1
3
DPAK
Drain
Drain
ORDERING INFORMATION
80N02
Y
WW
G
4
2
MARKING DIAGRAMS
4
& PIN ASSIGNMENTS
http://onsemi.com
G
3
Source
(Surface Mount)
R
1 2
CASE 369C
DS(on)
5.0 mW
STYLE 2
= Device Code
= Year
= Work Week
= Pb−Free Package
N−Channel
DPAK
3
Publication Order Number:
D
TYP
4
S
Gate
1
(Straight Lead)
1 2
CASE 369D
Drain
Drain
NTD80N02/D
STYLE 2
4
2
3
DPAK
I
D
80 A
MAX
3
Source
4

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NTD80N02-1G Summary of contents

Page 1

... CASE 369C CASE 369D DPAK DPAK DPAK (Surface Mount) (Straight Lead) STYLE 2 STYLE 2 STYLE 2 MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain 4 Drain Gate Source Source 1 2 Drain Drain 80N02 = Device Code Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Publication Order Number: NTD80N02/D 4 ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note Vdc 250 mAdc Positive Temperature Coefficient Zero Gate Voltage Drain Current ( Vdc Vdc ...

Page 3

V 4 25° 0.5 1 1.5 2 2.5 V ...

Page 4

C iss 2000 C oss 1000 C rss 0 −8 −6 −4 − GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. ...

Page 5

... Figure 13. Thermal Response − Various Duty Cycles ORDERING INFORMATION Order Number NTD80N02T4G NTD80N02−1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Spe- cifications Brochure, BRD8011/D. TYPICAL CHARACTERISTICS 100 ms ...

Page 6

... DETAIL 0.005 (0.13 5.80 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369AA−01 ISSUE GAUGE SEATING L2 C PLANE PLANE DETAIL A ROTATED 90 CW ...

Page 7

DETAIL 0.005 (0.13 PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C−01 ISSUE GAUGE L2 SEATING C ...

Page 8

... S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTD80N02/D ...

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