NTB13N10T4G ON Semiconductor, NTB13N10T4G Datasheet
NTB13N10T4G
Specifications of NTB13N10T4G
Related parts for NTB13N10T4G
NTB13N10T4G Summary of contents
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NTB13N10 Power MOSFET 100 N−Channel Enhancement−Mode D Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Avalanche Energy Specified • I and R Specified at Elevated Temperature DSS DS(on) • Mounting Information ...
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... Switching characteristics are independent of operating junction temperature. ORDERING INFORMATION Device NTB13N10 NTB13N10G NTB13N10T4 NTB13N10T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NTB13N10 (T = 25°C unless otherwise noted) ...
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7 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS ...
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Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance can be charged by current from the ...
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TOTAL GATE CHARGE (nC) G Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge ...
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SINGLE PULSE T = 25° 100 LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 0.1 0 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum ...
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... PL 0.13 (0.005 VARIABLE CONFIGURATION ZONE VIEW W−W VIEW W−W 1 10.66 0.42 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTB13N10 PACKAGE DIMENSIONS 2 D PAK CASE 418B−01 ISSUE ...
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... Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com NTB13N10 N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 8 ON Semiconductor Website: http://onsemi ...