NTP13N10G ON Semiconductor, NTP13N10G Datasheet
NTP13N10G
Specifications of NTP13N10G
Related parts for NTP13N10G
NTP13N10G Summary of contents
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... T 260 °C L Device NTP13N10 NTP13N10G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. 1 http://onsemi ...
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ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage ( Vdc 250 mAdc Temperature Coefficient (Positive) Zero Gate Voltage Collector Current ( Vdc 100 Vdc 25° ...
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7 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. ...
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Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Δt) are determined by how fast the FET input capacitance can be charged by current from the ...
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TOTAL GATE CHARGE (nC) G Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge ...
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SINGLE PULSE T = 25° μs 100 μ LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 0.1 0 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased ...
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... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...