BSS123LT3 ON Semiconductor, BSS123LT3 Datasheet
BSS123LT3
Specifications of BSS123LT3
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BSS123LT3 Summary of contents
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BSS123LT1 Preferred Device Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features Pb−Free Packages are Available MAXIMUM RATINGS Rating Drain−Source Voltage Gate−Source Voltage − Continuous 50 ms) − Non−repetitive (t p Drain Current − Continuous (Note 1) − Pulsed (Note ...
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... Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. ORDERING INFORMATION Device BSS123LT1 BSS123LT1G BSS123LT3 BSS123LT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. BSS123LT1 ( unless otherwise noted) ...
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TYPICAL ELECTRICAL CHARACTERISTICS 2.0 1 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0 1.0 2.0 3.0 4.0 5.0 6 DRAN SOURCE VOLTAGE (VOLTS) DS Figure 1. Ohmic Region 2.4 2.2 V ...
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... *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...