NILMS4501NR2 ON Semiconductor, NILMS4501NR2 Datasheet
NILMS4501NR2
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NILMS4501NR2 Summary of contents
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... G = Pb−Free Package PIN CONNECTIONS Drain (4) (Bottom View) ORDERING INFORMATION Device Package NILMS4501NR2 PLLP4 NILMS4501NR2G PLLP4 (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 Typ I MAX D 9 ...
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MAIN MOSFET MAXIMUM RATINGS Rating Drain−to−Source Voltage Gate−to−Source Voltage Drain Current (Note 1) Continuous @ T = 25°C A Continuous @ T = 100°C A v10 s) Pulsed (t p Total Power Dissipation @ T = 25°C (Note 1) A ...
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MAIN MOSFET ELECTRICAL CHARACTERISTICS Characteristic DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance (V DS Transfer Capacitance SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall ...
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TYPICAL ELECTRICAL CHARACTERISTICS 0.1 0.2 0.3 0.4 0.5 0 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 20 V ...
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TYPICAL ELECTRICAL CHARACTERISTICS 2 2.0 1.5 1.0 0.5 0 −50 50 100 JUNCTION TEMPERATURE (°C) J Figure 7. On−Resistance Variation with Temperature 2000 T = −55°C I ...
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Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance can be charged by current from the ...
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... RR Compared to ON Semiconductor standard cell density low voltage MOSFETs, high cell density MOSFET diodes are faster (shorter t reverse recovery characteristic. The softness advantage of the high cell density diode means they can be forced through ...
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Figure 16. Diode Forward Voltage versus Current The Forward Biased Safe Operating Area curves define the maximum simultaneous drain−to−source voltage and drain current that a transistor can handle safely when it is forward ...
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... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...