NTB30N06G ON Semiconductor, NTB30N06G Datasheet

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NTB30N06G

Manufacturer Part Number
NTB30N06G
Description
MOSFET N-CH 60V 27A D2PAK
Manufacturer
ON Semiconductor
Datasheet
1.NTB30N06T4.pdf (7 pages)

Specifications of NTB30N06G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
42 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
27A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
46nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
88.2W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
NTB30N06G
Manufacturer:
ON
Quantity:
12 500
NTP30N06, NTB30N06
Power MOSFET
30 Amps, 60 Volts
N−Channel TO−220 and D
power supplies, converters and power motor controls and bridge
circuits.
Features
•
Typical Applications
•
•
•
•
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 1
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
Gate−to−Source Voltage
Drain Current
Total Power Dissipation @ T
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering
Designed for low voltage, high speed switching applications in
Pb−Free Packages are Available
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
Derate above 25°C
Energy − Starting T
(V
I
Purposes, 1/8 in from case for 10 seconds
L(pk)
DD
− Continuous
− Non−Repetitive (t
− Continuous @ T
− Continuous @ T
− Single Pulse (t
= 50 Vdc, V
= 26 A, V
DS
Rating
GS
= 60 Vdc)
J
p
(T
= 10 Vdc, L = 0.3 mH
= 25°C
v10 ms)
A
A
p
J
GS
v10 ms)
= 25°C
= 100°C
= 25°C unless otherwise noted)
A
= 10 MW)
= 25°C
2
PAK
Symbol
T
V
V
R
J
V
V
E
I
P
DGR
, T
T
DSS
DM
I
I
qJC
GS
GS
D
D
AS
D
L
stg
−55 to
Value
+175
"20
"30
88.2
0.59
101
260
1.7
60
60
27
15
80
1
W/°C
°C/W
Unit
Vdc
Vdc
Vdc
Adc
Apk
mJ
°C
°C
W
Gate
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
1
2
1
NTx30N06G
AYWW
3
30 AMPERES, 60 VOLTS
Drain
NTx30N06
x
A
Y
WW
G
Drain
4
ORDERING INFORMATION
2
4
G
CASE 221A
MARKING DIAGRAMS
TO−220AB
& PIN ASSIGNMENTS
R
STYLE 5
http://onsemi.com
DS(on)
3
Source
= Device Code
= B or P
= Assembly Location
= Year
= Work Week
= Pb−Free Package
D
Publication Order Number:
= 42 mW
S
N−Channel
Gate
1
1
NTx
30N06G
AYWW
2
Drain
Drain
3
NTP30N06/D
CASE 418B
4
2
STYLE 2
D
2
PAK
3
Source
4

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NTB30N06G Summary of contents

Page 1

NTP30N06, NTB30N06 Power MOSFET 30 Amps, 60 Volts N−Channel TO−220 and D Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available Typical Applications • ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 1) = 250 mAdc Vdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc ...

Page 3

DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0. 0.08 0.07 T ...

Page 4

2000 C iss 1600 1200 C rss 800 400 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 ...

Page 5

... Figure 14. Diode Reverse Recovery Waveform ORDERING INFORMATION Device NTP30N06 NTB30N06 NTB30N06G NTB30N06T4 NTB30N06T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NTP30N06, NTB30N06 P (pk) ...

Page 6

... VARIABLE CONFIGURATION ZONE VIEW W−W VIEW W−W 1 10.66 0.42 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTP30N06, NTB30N06 PACKAGE DIMENSIONS 2 D PAK CASE 418B−04 ISSUE ...

Page 7

... American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 7 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...

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