NTB30N06L ON Semiconductor, NTB30N06L Datasheet

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NTB30N06L

Manufacturer Part Number
NTB30N06L
Description
MOSFET N-CH 60V 30A D2PAK
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTB30N06L

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
46 mOhm @ 15A, 5V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
32nC @ 5V
Input Capacitance (ciss) @ Vds
1150pF @ 25V
Power - Max
88.2W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTB30N06L
Manufacturer:
ON Semiconductor
Quantity:
7
Part Number:
NTB30N06L
Manufacturer:
ON SEMICONDUCTOR
Quantity:
30 000
Part Number:
NTB30N06LG
Manufacturer:
ON SEMICONDUCTOR
Quantity:
30 000
Part Number:
NTB30N06LG
Manufacturer:
ON
Quantity:
12 500
Part Number:
NTB30N06LT4
Manufacturer:
ON SEMICONDUCTOR
Quantity:
30 000
NTP30N06L, NTB30N06L
Power MOSFET
30 Amps, 60 Volts, Logic Level,
N−Channel TO−220 and D
power supplies, converters and power motor controls and bridge
circuits.
Features
Typical Applications
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 4
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
Gate−to−Source Voltage
Drain Current
Total Power Dissipation @ T
Derate above 25°C
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
(V
I
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering
Purposes, 1/8 in from case for 10 seconds
L(pk)
Designed for low voltage, high speed switching applications in
Pb−Free Packages are Available
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
DD
= 50 Vdc, V
= 26 A, V
− Continuous @ T
− Continuous @ T
− Single Pulse (t
DS
− Continuous
− Non−Repetitive (t
GS
= 60 Vdc)
Rating
J
= 5.0 Vdc, L = 0.3 mH
= 25°C
(T
J
GS
p
= 25°C unless otherwise noted)
v10 ms)
A
A
A
= 10 MW)
= 25°C
= 100°C
= 25°C
p
v10 ms)
2
PAK
Symbol
T
V
V
R
J
V
V
E
I
P
DGR
, T
T
DSS
DM
I
I
qJC
GS
GS
D
D
AS
D
L
stg
−55 to
Value
+175
"15
"20
88.2
0.59
101
260
1.7
60
60
30
15
90
1
W/°C
°C/W
Unit
Vdc
Vdc
Vdc
Adc
Apk
mJ
°C
°C
W
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
1
1
2
3
3
2
30 AMPERES, 60 VOLTS
NTx30N06L = Device Code
x
A
Y
WW
G
ORDERING INFORMATION
4
G
R
http://onsemi.com
DS(on)
4
CASE 221A
CASE 418B
STYLE 5
TO−220
STYLE 2
D
= P or B
= Assembly Location
= Year
= Work Week
= Pb−Free Package
2
D
PAK
Publication Order Number:
= 46 mW
S
N−Channel
Gate
Gate
DIAGRAMS
1
MARKING
NTx30N06LG
AYWW
1
NTx
30N06LG
AYWW
NTP30N06L/D
Drain
Drain
Drain
Drain
4
4
2
2
3
Source
3
Source

Related parts for NTB30N06L

NTB30N06L Summary of contents

Page 1

... NTP30N06L, NTB30N06L Power MOSFET 30 Amps, 60 Volts, Logic Level, N−Channel TO−220 and D Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available Typical Applications • Power Supplies • ...

Page 2

... SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (I Reverse Recovery Time Reverse Recovery Stored Charge 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperatures. NTP30N06L, NTB30N06L (T = 25°C unless otherwise noted Vdc 7.0 Vdc Adc) ...

Page 3

... D Figure 3. On−Resistance versus Gate−to−Source Voltage 1 1.6 1.4 1.2 1 0.8 0.6 −50 − 100 T , JUNCTION TEMPERATURE (°C) J Figure 5. On−Resistance Variation with Temperature NTP30N06L, NTB30N06L 60 ≥ 4 3 25° 100° 1.5 2 GATE−TO−SOURCE VOLTAGE (VOLTS) GS Figure 2. Transfer Characteristics ...

Page 4

... 175°C J SINGLE PULSE 100 100 Limit DS(on) Thermal Limit Package Limit 0.1 0 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased Safe Operating Area NTP30N06L, NTB30N06L 25° iss 2 C oss 1 C rss Drain−to−Source Voltage versus Total Charge ...

Page 5

... Figure 14. Diode Reverse Recovery Waveform ORDERING INFORMATION Device NTP30N06L NTP30N06LG NTB30N06L NTB30N06LG NTB30N06LT4 NTB30N06LT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NTP30N06L, NTB30N06L P (pk DUTY CYCLE 0.01 0.1 t, TIME (s) Figure 13 ...

Page 6

... NTP30N06L, NTB30N06L PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AA NOTES: SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI −T− PLANE Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH DIMENSION Z DEFINES A ZONE WHERE ALL S BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM MIN A 0.570 B 0.380 C 0.160 D 0.025 F 0 ...

Page 7

... SEATING PLANE 0.13 (0.005 10.66 0.42 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTP30N06L, NTB30N06L PACKAGE DIMENSIONS 2 D PAK CASE 418B−04 ISSUE SOLDERING FOOTPRINT* 8 ...

Page 8

... P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com NTP30N06L, NTB30N06L N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2− ...

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