NTD4815N-35G ON Semiconductor, NTD4815N-35G Datasheet

MOSFET N-CH 35A 30V IPAK TRIMMED

NTD4815N-35G

Manufacturer Part Number
NTD4815N-35G
Description
MOSFET N-CH 35A 30V IPAK TRIMMED
Manufacturer
ON Semiconductor
Series
-r
Datasheet

Specifications of NTD4815N-35G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
15 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.9A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
6.6nC @ 4.5V
Input Capacitance (ciss) @ Vds
770pF @ 12V
Power - Max
1.26W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak (3 straight short leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
35A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
15mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTD4815N-35G
Manufacturer:
ON
Quantity:
12 500
NTD4815N
Power MOSFET
30 V, 35 A, Single N−Channel, DPAK/IPAK
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2010
October, 2010 − Rev. 6
MAXIMUM RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
(Note 1)
Power Dissipation
R
Continuous Drain
Current R
(Note 2)
Power Dissipation
R
Continuous Drain
Current R
(Note 1)
Power Dissipation
R
Pulsed Drain
Current
Current Limited by Package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche
Energy (V
I
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
L
Low R
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb−Free Devices
CPU Power Delivery
DC−DC Converters
High Side Switching
qJA
qJA
qJC
= 11 A
(Note 1)
(Note 2)
(Note 1)
DS(on)
pk
qJA
qJA
qJC
DD
, L = 1.0 mH, R
= 24 V, V
to Minimize Conduction Losses
Parameter
t
GS
Steady
p
State
=10ms
(T
G
= 10 V,
J
= 25 W)
= 25°C unless otherwise stated)
T
T
T
T
T
T
T
T
T
T
T
A
A
A
A
A
A
C
C
C
A
A
= 25°C
= 85°C
= 25°C
= 25°C
= 85°C
= 25°C
= 25°C
= 85°C
= 25°C
= 25°C
= 25°C
I
Symbol
DmaxPkg
V
T
dV/dt
EAS
V
I
P
P
P
T
DSS
STG
T
ID
DM
I
I
I
GS
D
D
S
J
D
D
D
L
,
−55 to
Value
+175
1.92
1.26
32.6
60.5
±20
260
8.5
6.5
6.9
5.3
30
35
27
87
35
27
6
1
V/ns
Unit
mJ
°C
°C
W
W
W
V
V
A
A
A
A
A
A
Gate
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
CASE 369AA
1
1 2
(Bent Lead)
V
STYLE 2
Drain
Drain 3
(BR)DSS
30 V
DPAK
4
2
3
Source
ORDERING INFORMATION
G
Y
WW
4815N = Device Code
G
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
N−CHANNEL MOSFET
http://onsemi.com
Gate
25 mW @ 4.5 V
(Straight Lead)
15 mW @ 10 V
R
CASE 369AC
1
= Year
= Work Week
= Pb−Free Package
DS(ON)
Drain
Drain
3 IPAK
1
4
D
2
2 3
Publication Order Number:
4
3
MAX
Source
S
Gate
(Straight Lead
CASE 369D
1
1
NTD4815N/D
Drain
DPAK)
Drain
I
2
IPAK
D
4
3
35 A
2
MAX
3
Source
4

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NTD4815N-35G Summary of contents

Page 1

... CASE 369AC CASE 369D 3 IPAK IPAK (Straight Lead) (Straight Lead DPAK) MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain 4 4 Drain Gate Drain Source Source Gate Drain Source Y = Year WW = Work Week 4815N = Device Code G = Pb−Free Package ORDERING INFORMATION Publication Order Number: NTD4815N/D 4 ...

Page 2

THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Case (Drain) Junction−to−TAB (Drain) Junction−to−Ambient – Steady State (Note 1) Junction−to−Ambient – Steady State (Note 2) 1. Surface−mounted on FR4 board using 1 sq−in pad Cu. 2. Surface−mounted on FR4 board using the ...

Page 3

ELECTRICAL CHARACTERISTICS Parameter SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain Inductance, ...

Page 4

DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0.030 0.025 0.020 0.015 0.010 0.005 ...

Page 5

1400 DS GS 1300 1200 C 1100 iss 1000 900 800 700 600 C rss 500 400 300 200 100 C rss ...

Page 6

... ORDERING INFORMATION Device NTD4815NT4G NTD4815NT4H (Pb−Free, Halide−Free) NTD4815N−1G NTD4815N−35G IPAK Trimmed Lead †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. TYPICAL PERFORMANCE CURVES 25°C 100° ...

Page 7

... DETAIL 0.005 (0.13 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK (SINGLE GUAGE) CASE 369AA−01 ISSUE GAUGE L2 SEATING C PLANE PLANE DETAIL A ROTATED SOLDERING FOOTPRINT* 6.20 3 ...

Page 8

... S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTD4815N/D ...

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