NTD5406NG ON Semiconductor, NTD5406NG Datasheet

MOSFET N-CH 40V 70A DPAK

NTD5406NG

Manufacturer Part Number
NTD5406NG
Description
MOSFET N-CH 40V 70A DPAK
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTD5406NG

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
10 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
70A
Vgs(th) (max) @ Id
3.5V @ 250µA
Gate Charge (qg) @ Vgs
45nC @ 10V
Input Capacitance (ciss) @ Vds
2500pF @ 32V
Power - Max
100W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTD5406NG
Manufacturer:
ON/安森美
Quantity:
20 000
NTD5406N
Power MOSFET
40 V, 70 A, Single N−Channel, DPAK
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
© Semiconductor Components Industries, LLC, 2010
August, 2010 − Rev. 4
MAXIMUM RATINGS
Continuous Drain
Current − R
THERMAL RESISTANCE RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Power Dissipation −
R
Continuous Drain
Current − R
(Note 1)
Power Dissipation −
R
Pulsed Drain Current
Operating Junction and Storage Temperature
Source Current (Body Diode) Pulsed
Single Pulse Drain−to Source Avalanche
Energy − (V
L = 1 mH, R
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
Junction−to−Case (Drain)
Junction−to−Case (Note 1)
Low R
High Current Capability
Low Gate Charge
These are Pb−Free Devices
Electronic Brake Systems
Electronic Power Steering
Bridge Circuits
qJC
qJA
(Cu Area 1.127 sq in [2 oz] including traces).
(Note 1)
DS(on)
qJC
qJA
DD
G
= 25 W)
= 50 V, V
Parameter
Parameter
GS
(T
Steady
Steady
Steady
Steady
State
State
State
State
J
= 10 V, I
= 25°C unless otherwise stated)
t
p
= 10 ms
T
T
T
T
T
T
PK
C
A
C
C
A
A
= 125°C
= 125°C
= 25°C
= 25°C
= 25°C
= 25°C
= 30 A,
(Note 1)
Symbol
Symbol
V
T
R
R
EAS
V
I
T
P
P
DSS
DM
STG
T
I
I
I
θJC
θJA
GS
D
D
S
J
D
D
L
,
−55 to
Value
12.2
63.5
Max
±20
100
150
175
450
260
7.0
3.0
1.5
40
70
40
49
1
°C/W
Unit
Unit
mJ
°
°C
W
W
V
V
A
A
A
A
C
†For information on tape and reel specifications,
NTD5406NG
NTD5406NT4G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
V
(BR)DSS
Device
40 V
1 2
CASE 369C
STYLE 2
ORDERING INFORMATION
DPAK
G
3
Y
WW
5406N = Specific Device Code
G
http://onsemi.com
8.7 mΩ @ 10 V
4
R
(Pb−Free)
(Pb−Free)
N−Channel
Package
DS(ON)
= Year
= Work Week
= Pb−Free Device
DPAK
DPAK
D
Publication Order Number:
S
TYP
1
2500 / Tape & Reel
MARKING
DIAGRAM
75 Units / Rail
Shipping†
NTD5406N/D
06NG
YWW
(Note 1)
I
D
70 A
54
MAX

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NTD5406NG Summary of contents

Page 1

... Year WW = Work Week 5406N = Specific Device Code G = Pb−Free Device ORDERING INFORMATION Device Package Shipping† NTD5406NG DPAK 75 Units / Rail (Pb−Free) NTD5406NT4G DPAK 2500 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D ...

Page 2

ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES AND CAPACITANCES ...

Page 3

DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0.03 0.025 0.02 0.015 0.01 0.005 ...

Page 4

iss 3000 2400 C rss 1800 1200 C oss 600 C rss GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE ...

Page 5

TYPICAL PERFORMANCE CURVES D = 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 SINGLE PULSE 0.01 0.00001 0.0001 P (pk) D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME J(pk DUTY CYCLE, ...

Page 6

... M *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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