NTMS4872NR2G ON Semiconductor, NTMS4872NR2G Datasheet

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NTMS4872NR2G

Manufacturer Part Number
NTMS4872NR2G
Description
MOSFET N-CH 30V 6A 8-SOIC
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTMS4872NR2G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
13.5 mOhm @ 10.2A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 4.5V
Input Capacitance (ciss) @ Vds
1700pF @ 15V
Power - Max
820mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTMS4872NR2G
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
NTMS4872NR2G
Quantity:
500
UPDATE CHANGE NOTIFICATION
Generic Copy
29-Aug-2008
SUBJECT: ON Semiconductor Update Notification #16146
TITLE: Update Notification of FPCN16142: Copper Wire in the SO8 Packages for MOSFET
Products
PROPOSED FIRST SHIP DATE: 20-Nov-2008
AFFECTED CHANGE CATEGORY(S): Assembly
AFFECTED PRODUCT DIVISION(S): PowerFET Business Unit
ADDITIONAL RELIABILITY DATA:
SO8 Device: NTMS4807NT2G
Test: High Temperature Reverse Bias (HTRB)
Conditions: Ta=150'C, Vds= 80% BVdss Rating, Duration : 1008-Hrs, 3-Lots
Results: 0/240
Test: High Temperature Gate Bias (HTGB)
Conditions: Ta=150'C, Vds= 100% Vgs Rating, Duration : 1008-Hrs, 3-Lots
Results: 0/240
Test: High Temperature Storage Life (HTSL)
Conditions: Ta=175'C, Duration : 1008-Hrs, 3-Lots
Results: 0/240
Test: High Temperature Storage Life (HTSL)
Conditions: Ta=150'C, Duration : 1008-Hrs, 3-Lots
Results: 0/240
Test: Intermittent Operating Life (IOL-PC)
Conditions: Ta=25'C, delta Tj=100'C, 2-min on/off, 15K- cy, 2-Lots
Results: 0/240
Test: Temperature Cycling (TC-PC)
Conditions: Ta=-65'C/150'C, Air-to-Air, Dwell >=10-min, 1000-cy, 3-Lots
Results: 0/240
Test: Autoclave Test (AC-PC)
Conditions: Ta=121'C, P=15psi, RH=100%, Duration: 96-Hrs, 3-Lots
Results: 0/240
Test: Highly Accelerated Stress Test (HAST)
Conditions: Ta=130'C, RH=85%, Duration: 96-Hrs, 3-Lots
Results: 0/240
Issue Date: 29-Aug-2008
Rev.07-02-06
Page 1 of 3

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NTMS4872NR2G Summary of contents

Page 1

... UPDATE CHANGE NOTIFICATION SUBJECT: ON Semiconductor Update Notification #16146 TITLE: Update Notification of FPCN16142: Copper Wire in the SO8 Packages for MOSFET Products PROPOSED FIRST SHIP DATE: 20-Nov-2008 AFFECTED CHANGE CATEGORY(S): Assembly AFFECTED PRODUCT DIVISION(S): PowerFET Business Unit ADDITIONAL RELIABILITY DATA: SO8 Device: NTMS4807NT2G ...

Page 2

... An addendum to Final Product/Process Change Notification #16142: In connection to ON Semiconductor’s Initial Product Change Notification number 16091: ON Semiconductor is notifying customers of its use of Copper Wire (in place of Gold Wire) on their MOSFET Products in the SO8 Package. Products assembled with both High Cell Density and Trench2 MOSFET Die will be affected. (Note: Original Product Change Notice only had High Cell Density MOSFET Die listed ...

Page 3

... Update Notification #16146 AFFECTED DEVICE LIST NTMD4820NR2G NTMD4840NR2G NTMS4807NR2G NTMS4816NR2G NTMS4872NR2G Issue Date: 29-Aug-2008 Rev.07-02-06 Page ...

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