2N7002KT1G ON Semiconductor, 2N7002KT1G Datasheet
2N7002KT1G
Manufacturer Part Number
2N7002KT1G
Description
MOSFET N-CH 60V 320MA SOT-23
Manufacturer
ON Semiconductor
Type
Small Signalr
Datasheet
1.2N7002KT3G.pdf
(5 pages)
Specifications of 2N7002KT1G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.6 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
320mA
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
0.7nC @ 4.5V
Input Capacitance (ciss) @ Vds
24.5pF @ 20V
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
1.6Ohm
Drain-source On-volt
60V
Gate-source Voltage (max)
±20V
Drain Current (max)
320mA
Power Dissipation
300mW
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.6 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.32 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
2N7002KT1G
2N7002KT1GOSTR
2N7002KT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2N7002KT1G
Manufacturer:
ON
Quantity:
69 000
Company:
Part Number:
2N7002KT1G
Manufacturer:
ON Semiconductor
Quantity:
2 450
Company:
Part Number:
2N7002KT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
2N7002KT1G
Manufacturer:
ON/安森美
Quantity:
20 000
2N7002K
Small Signal MOSFET
60 V, 380 mA, Single, N−Channel, SOT−23
Features
•
•
•
•
Applications
•
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
© Semiconductor Components Industries, LLC, 2011
February, 2011 − Rev. 6
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Drain−to−Source Voltage
Gate−to−Source Voltage
Drain Current (Note 1)
Power Dissipation (Note 1)
Pulsed Drain Current (t
Operating Junction and Storage
Temperature Range
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
Gate−Source ESD Rating
(HBM, Method 3015)
Junction−to−Ambient − Steady State
(Note 1)
Junction−to−Ambient − t ≤ 5 s (Note 1)
Compliant
ESD Protected
Low R
Surface Mount Package
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Low Side Load Switch
Level Shift Circuits
DC−DC Converter
Portable Applications i.e. DSC, PDA, Cell Phone, etc.
sq [1 oz] including traces)
Steady State
t < 5 s
Steady State
t < 5 s
(1/8″ from case for 10 s)
DS(on)
Characteristic
Rating
p
= 10 ms)
(T
J
= 25°C unless otherwise stated)
T
T
T
T
A
A
A
A
= 25°C
= 85°C
= 25°C
= 85°C
T
Symbol
Symbol
J
V
ESD
R
R
V
, T
I
P
DSS
DM
T
I
I
qJA
qJA
GS
D
S
D
L
STG
−55 to
Value
+150
2000
Max
±20
320
230
380
270
300
420
300
260
417
300
1.5
60
1
°C/W
Unit
Unit
mW
mA
mA
°C
°C
V
V
A
V
†For information on tape and reel specifications,
2N7002KT1G
2N7002KT1H
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
V
1
(BR)DSS
*Date Code orientation and/or position may
60 V
CASE 318
STYLE 21
Device
SOT−23
vary depending upon manufacturing location.
Source
704
M
G
(Note: Microdot may be in either location)
Gate
2
ORDERING INFORMATION
SIMPLIFIED SCHEMATIC
http://onsemi.com
3
1
2
= Specific Device Code
= Date Code
= Pb−Free Package
(Pb−Free)
(Pb−Free)
2.5 W @ 4.5 V
Package
1.6 W @ 10 V
R
SOT−23
SOT−23
(Top View)
DS(on)
Publication Order Number:
MARKING DIAGRAM
& PIN ASSIGNMENT
Gate
1
MAX
3000/Tape & Reel
3000/Tape & Reel
704 MG
3
Drain
Shipping
G
3
Drain
2N7002K/D
(Note 1)
I
380 mA
D
MAX
Source
2
†
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2N7002KT1G Summary of contents
Page 1
... J STG +150 I 300 260 °C L ESD 2000 V 2N7002KT1G Symbol Max Unit 417 °C/W R 2N7002KT1H qJA R 300 qJA †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ...
Page 2
ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES AND CAPACITANCES ...
Page 3
9.0 V 8.0 V 1.2 7.0 V 6.0 V 0.8 0 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 125°C ...
Page 4
C iss 20 C oss 10 C rss GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 0.1 0.01 0.4 Figure 9. Diode Forward Voltage vs. Current TYPICAL CHARACTERISTICS 5 ...
Page 5
... SCALE 10:1 inches 0.8 0.031 N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 5 MILLIMETERS INCHES NOM MAX ...