NTB45N06LT4G ON Semiconductor, NTB45N06LT4G Datasheet

NTB45N06LT4G

Manufacturer Part Number

NTB45N06LT4G

Description

MOSFET N-CH 60V 45A D2PAK

Manufacturer

ON Semiconductor

Type

Power MOSFETr

Datasheet

1.NTB45N06LT4.pdf (8 pages)

Specifications of NTB45N06LT4G

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

28 mOhm @ 22.5A, 5V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

45A

Vgs(th) (max) @ Id

2V @ 250µA

Gate Charge (qg) @ Vgs

32nC @ 5V

Input Capacitance (ciss) @ Vds

1700pF @ 25V

Power - Max

2.4W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.028 Ohm @ 5 V

Forward Transconductance Gfs (max / Min)

22.8 S

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

+/- 15 V

Continuous Drain Current

45 A

Power Dissipation

125000 mW

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.028Ohm

Drain-source On-volt

60V

Gate-source Voltage (max)

±15V

Operating Temp Range

-55C to 175C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

2 +Tab

Package Type

D2PAK

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

NTB45N06LT4GOS
NTB45N06LT4GOS
NTB45N06LT4GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTB45N06LT4G

Manufacturer:

Quantity:

800

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTB45N06LT4G

Manufacturer:

Quantity:

12 500

Company:

BOSTOCK HK LIMITED

Part Number:

NTB45N06LT4G

Manufacturer:

Company:

Meier Automation Equipment Co., Limited

Part Number:

NTB45N06LT4G

Manufacturer:

ON/安森美

Quantity:

20 000

Company:

H&T Electronics

Part Number:

NTB45N06LT4G

Quantity:

5 000

Current page: 1 of 8
Download datasheet (82Kb)

NTP45N06L, NTB45N06L

Power MOSFET

45 Amps, 60 Volts

Logic Level, N−Channel TO−220 and

power supplies, converters and power motor controls and bridge

circuits.

Features

•

Typical Applications

•

August, 2005 − Rev. 2

Designed for low voltage, high speed switching applications in

Higher Current Rating

Lower R

Lower V

Lower Capacitances

Lower Total Gate Charge

Tighter V

Lower Diode Reverse Recovery Time

Lower Reverse Recovery Stored Charge

Pb−Free Packages are Available

Power Supplies

Converters

Power Motor Controls

Bridge Circuits

PAK

DS(on)

Specification

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Gate

NTx45N06LG

AYWW

45 AMPERES, 60 VOLTS

Drain

ORDERING INFORMATION

NTx45N06L = Device Code

CASE 221A

MARKING DIAGRAMS

& PIN ASSIGNMENTS

TO−220AB

STYLE 5

http://onsemi.com

DS(on)

Source

N−Channel

Publication Order Number:

= 28 mW

= B or P

= Assembly Location

= Year

= Work Week

= Pb−Free Package

Gate

NTx

45N06LG

AYWW

NTP45N06L/D

CASE 418B

Drain

STYLE 2

PAK

Source

Related parts for NTB45N06LT4G

NTB45N06LT4G Summary of contents

Page 1

NTP45N06L, NTB45N06L Power MOSFET 45 Amps, 60 Volts Logic Level, N−Channel TO−220 and 2 D PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Higher Current Rating ...

Page 2

... When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in ORDERING INFORMATION Device NTP45N06L NTP45N06LG NTB45N06L NTB45N06LG NTB45N06LT4 NTB45N06LT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NTP45N06L, NTB45N06L Symbol 25°C ...

Page 3

ELECTRICAL CHARACTERISTICS (T Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 3) = 250 mAdc Vdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc ...

Page 4

DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS ...

Page 5

3600 C iss 3200 C 2800 rss 2400 2000 1600 1200 800 400 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure ...

Page 6

Normalized Steady State qJC 0.1 0.01 0.00001 0.0001 10 Normalized Steady State, qJA 1″ square Cu Pad, Cu Area 1.127 inch FR4 board 1 0.1 0.01 0.001 0.00001 0.0001 ...

Page 7

... VARIABLE CONFIGURATION ZONE VIEW W−W VIEW W−W 1 10.66 0.42 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTP45N06L, NTB45N06L PACKAGE DIMENSIONS 2 D PAK CASE 418B−04 ISSUE ...

Page 8

... American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 8 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...

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