BS170RL1G ON Semiconductor, BS170RL1G Datasheet - Page 4

• Manufacturer Part Number: BS170RL1G
• Description: MOSFET N-CH 60V 500MA TO-92
• Manufacturer: ON Semiconductor

Specifications of BS170RL1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5 Ohm @ 200mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 500mA
• Vgs(th) (max) @ Id: 3V @ 1mA
• Input Capacitance (ciss) @ Vds: 60pF @ 10V
• Power - Max: 350mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: BS170RL1G; BS170RL1GOSTR

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SEATING
PLANE
R
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
X X
1
A
V
H
N
G
N
P
L
C
K
B
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
PACKAGE DIMENSIONS
TO−92 (TO−226)
http://onsemi.com
SECTION X−X
CASE 29−11
ISSUE AL
D
BS170
4
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
Y14.5M, 1982.
IS UNCONTROLLED.
BEYOND DIMENSION K MINIMUM.
STYLE 30:
DIM
G
A
B
C
D
H
J
K
L
N
P
R
V
PIN 1. DRAIN
2. GATE
3. SOURCE
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
0.135
0.115
MIN
−−−
INCHES
0.205
0.210
0.165
0.021
0.055
0.105
0.020
0.105
0.100
MAX
−−−
−−−
−−−
−−−
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
0.407
12.70
MILLIMETERS
MIN
4.45
4.32
3.18
1.15
2.42
0.39
6.35
2.04
2.93
3.43
−−−
0.533
MAX
5.20
5.33
4.19
1.39
2.66
0.50
2.66
2.54
−−−
−−−
−−−
−−−
BS170/D