ADG419BRM Analog Devices Inc, ADG419BRM Datasheet - Page 3

• Manufacturer Part Number: ADG419BRM
• Description: Analog Switch Single SPDT 8-Pin MSOP
• Manufacturer: Analog Devices Inc
• Type: Analog Switchr
• Series: LC²MOSr

Specifications of ADG419BRM

• Package: 8MSOP
• Maximum On Resistance: 70@12V Ohm
• Maximum Propagation Delay Bus To Bus: 160@±15V|180@12V ns
• Maximum High Level Output Current: 30 mA
• Switch Architecture: SPDT
• Power Supply Type: Single|Dual
• Rohs Status: RoHS non-compliant
• Function: Switch
• Circuit: 1 x SPDT
• On-state Resistance: 35 Ohm
• Voltage Supply Source: Single Supply
• Voltage - Supply, Single/dual (±): 5V, 12V
• Current - Supply: 1µA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

SPECIFICATIONS
DUAL SUPPLY
V
Table 1.
Parameter
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
1
2
Temperature ranges are as follows: B Version: −40°C to +125°C; T Version: −55°C to +125°C.
Guaranteed by design, not subject to production test.
DD
Analog Signal Range
R
Source Off Leakage, I
Drain Off Leakage, I
Channel On Leakage, I
Input High Voltage, V
Input Low Voltage, V
Input Current
t
Break-Before-Make Time Delay, t
Off Isolation
Channel-to-Channel Crosstalk
C
C
I
I
I
DD
SS
L
TRANSITION
ON
S
D
= 15 V ± 10%, V
I
, C
(Off )
INL
S
or I
(On)
INH
1
SS
D
INL
= −15 V ± 10%, V
S
(Off )
INH
(Off )
D
, I
S
(On)
2
D
+25°C
25
35
±0.1
±0.25
±0.1
±0.75
±0.4
±0.75
160
30
5
80
90
6
55
0.0001
1
0.0001
1
0.0001
1
L
= 5 V ± 10%, GND = 0 V, unless otherwise noted.
−40°C to
+85°C
45
±5
±5
±5
2.4
0.8
±0.005
±0.5
200
2.5
2.5
2.5
B Version
200
−40°C to
+125°C
V
45
±15
±30
±30
2.4
0.8
±0.005
±0.5
2.5
2.5
2.5
Rev. B | Page 3 of 16
SS
to V
DD
+25°C
25
35
±0.1
±0.25
±0.1
±0.75
±0.4
±0.75
145
30
5
80
70
6
55
0.0001
1
0.0001
1
0.0001
1
T Version
−55°C to
+125°C
V
45
±15
±30
±30
2.4
0.8
±0.005
±0.5
200
2.5
2.5
2.5
SS
to V
DD
Unit
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
μA typ
μA max
ns max
ns typ
ns min
dB typ
dB typ
pF typ
pF typ
μA typ
μA max
μA typ
μA max
μA typ
μA max
Test Conditions/Comments
V
V
V
V
see Figure 12
V
see Figure 12
V
V
R
V
R
V
R
R
f = 1 MHz
f = 1 MHz
V
V
V
L
L
L
L
D
DD
DD
D
D
S
IN
S2
S1
DD
IN
L
= 300 Ω, C
= 300 Ω, C
= 50 Ω, f = 1 MHz; see Figure 16
= 50 Ω, f = 1 MHz; see Figure 17
= 5.5 V
= V
= ±12.5 V, I
= ±15.5 V, V
= ±15.5 V, V
= V
= 0 V or 5 V
= ∓10 V; see Figure 14
= V
= +13.5 V, V
= +16.5 V, V
= +16.5 V, V
D
INL
S2
= ±15.5 V; see Figure 13
= ±10 V; see Figure 15
or V
INH
L
L
S
= 35 pF; V
= 35 pF;
S
S
= −10 mA
SS
SS
SS
= ∓15.5 V;
= ∓15.5 V;
= −13.5 V
= −16.5 V
= −16.5 V
ADG419
S1
= ±10 V,