2N6028G ON Semiconductor, 2N6028G Datasheet - Page 4

• Manufacturer Part Number: 2N6028G
• Description: THYRISTOR PROG UNIJUNCT 40V TO92
• Manufacturer: ON Semiconductor

Specifications of 2N6028G

• Voltage: 40V
• Power Dissipation (max): 300mW
• Voltage - Output: 11V
• Voltage - Offset (vt): 600mV
• Current - Gate To Anode Leakage (igao): 10nA
• Current - Valley (iv): 25µA
• Current - Peak: 150nA
• Package / Case: TO-92-3 (Standard Body), TO-226
• Current, Gate: 10 nA
• Current, Peak: 0.15 μA
• Current, Valley: 25 μA
• Device Dissipation: 300 mW
• Package Type: TO-92 (TO-226AA)
• Power Dissipation: 300 mW
• Resistance, Thermal, Junction To Case: 75 °C/W
• Temperature Range, Junction, Operating: –50 to +125 °C
• Temperature, Operating, Maximum: +100 °C
• Temperature, Operating, Minimum: –50 °C
• Thermal Resistance, Junction To Ambient: 200 °C/W
• Transistor Type: Unijunction
• Voltage, Reverse: 40 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2N6028G; 2N6028GOS

1000
0.05
0.02
0.01
100
5.0
2.0
1.0
0.5
0.2
0.1
10
10
0.01
0.02
5
Circuit Symbol
T
Figure 4. Effect of Supply Voltage
A
= 25°C
A
K
I
0.05
F
Figure 6. Forward Voltage
, PEAK FORWARD CURRENT (AMP)
V
S
, SUPPLY VOLTAGE (V)
G
0.1
10
0.2
TYPICAL VALLEY CURRENT BEHAVIOR
E
R
0.5
G
100 kW
= 10 kW
1 MW
Figure 8. Programmable Unijunction
15
K
1.0
N
N
A
P
P
Equivalent Circuit
with External Program"
Resistors R1 and R2
2.0
G
2N6027, 2N6028
http://onsemi.com
R
R
B2
B1
h =
5.0
2
1
20
4
R1 + R2
R
BB
R1
= R1 + R2
500
100
5.0
25
20
15
10
10
0
5
−50
0
(SEE FIGURE 3)
T
5.0
A
−25
= 25°C
Figure 7. Peak Output Voltage
Figure 5. Effect of Temperature
C
10
C
T
A
0
, AMBIENT TEMPERATURE (°C)
V
R
S
, SUPPLY VOLTAGE (V)
15
T
Typical Application
A
+25
K
20
G
+50
25
R
R
2
1
+75
30
+
R
G
C
100 kW
1 MW
C
= 10 kW
= 0.2 mF
1000 pF
+100
35
40