FMMT458TA Diodes Zetex, FMMT458TA Datasheet
FMMT458TA
Manufacturer Part Number
FMMT458TA
Description
Trans GP BJT NPN 400V 0.225A 3-Pin SOT-23 T/R
Manufacturer
Diodes Zetex
Type
NPNr
Datasheet
1.FMMT458TA.pdf
(2 pages)
Specifications of FMMT458TA
Package
3SOT-23
Supplier Package
SOT-23
Pin Count
3
Minimum Dc Current Gain
100@1mA@10V|100@50mA@10V|15@100mA@10V
Maximum Operating Frequency
50(Min) MHz
Maximum Dc Collector Current
0.225 A
Maximum Base Emitter Saturation Voltage
0.9@5mA@50mA V
Maximum Collector Emitter Saturation Voltage
0.2@2mA@20mA|0.5@6mA@50mA V
Maximum Collector Emitter Voltage
400 V
Maximum Emitter Base Voltage
5 V
Transistor Type
NPN
Current - Collector (ic) (max)
225mA
Voltage - Collector Emitter Breakdown (max)
400V
Vce Saturation (max) @ Ib, Ic
500mV @ 6mA, 50mA
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 50mA, 10V
Power - Max
500mW
Frequency - Transition
50MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
400V
Collector-base Voltage(max)
400V
Emitter-base Voltage (max)
5V
Collector Current (dc) (max)
225mA
Dc Current Gain (min)
100
Power Dissipation
500mW
Frequency (max)
50MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FMMT458TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FMMT458TA
Manufacturer:
ZETEX
Quantity:
9 000
Part Number:
FMMT458TA
Manufacturer:
ZETEX
Quantity:
20 000
Company:
Part Number:
FMMT458TAPBF
Manufacturer:
MIC
Quantity:
800
SOT23 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 4 – APRIL 2002
FEATURES
*
COMPLEMENTARY TYPE –
PARTMARKING DETAIL –
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions.
Spice parameter data is available upon request for this device
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Power Dissipation at T
Operating and Storage Temperature Range
400 Volt V
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Current Transfer Ratio
Transition Frequency
Breakdown Voltage
Breakdown Voltage
Breakdown Voltage
Output Capacitance
Saturation Voltage
Saturation Voltage
Collector-Emitter
Collector-Emitter
Turn On Voltage
Switching times
Collector-Base
Static Forward
Emitter-Base
Base-Emitter
Base-Emitter
PARAMETER
CEO
amb
=25°C
FMMT558
458
SYMBOL
V
V
V
V
V
V
CEO(sus)
(BR)CBO
(BR)EBO
C
I
I
I
CE(sat)
BE(sat)
BE(on)
h
CBO
t
t
EBO
CES
f
obo
on
off
FE
T
amb
TBA
MIN.
400
400
100
100
15
50
5
2260 Typical
SYMBOL
V
V
I
I
I
P
T
V
135 Typical
C
CM
B
tot
j
CBO
CEO
EBO
:T
= 25°C).
stg
MAX.
100
100
100
300
0.2
0.5
0.9
0.9
5
-55 to +150
UNIT
MHz
nA
nA
nA
pF
ns
ns
VALUE
V
V
V
V
V
V
V
400
400
225
200
500
5
1
FMMT458
C
I
I
I
I
C
I
I
I
I
B1
C
C
I
C
C
C
C
=100mA, V
V
I
C
=50mA, V
=50mA, V
=50mA, V
C
=20mA, I
=50mA, I
=50mA, I
SOT23
=10mA, V
=5mA, I
CB
CONDITIONS.
=1mA, V
=20V, f=1MHz
I
V
V
I
I
C
f=20MHz
C
E
V
=10mA*
CE
CB
=100 A
=100 A
EB
=320V
=320V
=4V
B2
UNIT
mW
mA
mA
B
B
B
CC
CE
CE
CE
°C
=-10mA
=2mA*
=6mA*
=5mA*
V
V
V
A
CE
CE
B
=10V*
=10V
=10V*
=100V
=10V*
=20V
E
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FMMT458TA Summary of contents
Page 1
SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4 – APRIL 2002 FEATURES * 400 Volt V CEO COMPLEMENTARY TYPE – PARTMARKING DETAIL – ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current ...
Page 2
TYPICAL CHARACTERISTICS 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 - Collector Current (Amps CE(sat) C ...