MMBT4403-7-F Diodes Zetex, MMBT4403-7-F Datasheet - Page 2

• Manufacturer Part Number: MMBT4403-7-F
• Description: Trans GP BJT PNP 40V 0.6A 3-Pin SOT-23 T/R
• Manufacturer: Diodes Zetex
• Type: PNPr

Specifications of MMBT4403-7-F

• Package: 3SOT-23
• Supplier Package: SOT-23
• Pin Count: 3
• Minimum Dc Current Gain: 30@0.1mA@1V|60@1mA@1V|100@10mA@1V|100@150mA@2V|20@500mA@2V
• Maximum Operating Frequency: 200(Min) MHz
• Maximum Dc Collector Current: 0.6 A
• Maximum Base Emitter Saturation Voltage: 0.95@15mA@150mA|1.3@50mA@500mA V
• Maximum Collector Emitter Saturation Voltage: 0.4@15mA@150mA|0.75@50mA@500mA V
• Maximum Collector Emitter Voltage: 40 V
• Maximum Emitter Base Voltage: 5 V
• Transistor Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage(max): 40V
• Emitter-base Voltage (max): 5V
• Collector Current (dc) (max): 600mA
• Dc Current Gain (min): 100
• Power Dissipation: 300mW
• Frequency (max): 200MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Compliant

Electrical Characteristics
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes:
DS30058 Rev. 9 - 2
250
350
300
200
150
100
4. Short duration pulse test used to minimize self-heating effect.
50
0
0
25
Fig. 1 Maximum Power Dissipation vs.
T , AMBIENT TEMPERATURE (°C)
A
Characteristic
50
Ambient Temperature
75
100 125
@T
A
= 25°C unless otherwise specified
150
Note 1
175
200
www.diodes.com
V
V
V
Symbol
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
C
I
C
h
h
CEX
I
h
h
h
f
t
BL
obo
t
t
FE
t
2 of 4
ibo
oe
re
fe
T
d
s
ie
r
f
-0.75
1,000
Min
-5.0
100
100
200
-40
-40
1.5
0.1
1.0
30
60
20
60
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
100
10
1
1
Fig. 2 Typical DC Current Gain vs. Collector Current
V
-0.40
-0.75
-0.95
-1.30
Max
-100
-100
300
500
100
225
CE
8.5
8.0
30
15
15
20
30
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
= 5V
I , COLLECTOR CURRENT (mA)
C
x 10
MHz
Unit
T = 25°C
nA
nA
kΩ
μS
pF
pF
ns
ns
ns
ns
⎯
⎯
A
V
V
V
V
V
10
-4
T = 150°C
A
I
I
I
V
V
I
I
I
I
I
I
I
I
I
V
V
V
f = 1.0kHz
V
f = 100MHz
V
V
V
C
C
E
C
C
C
C
C
C
C
C
C
I
B1
CE
CE
CB
EB
CE
CE
CC
BE(off)
CC
= -100μA, I
= -150mA, I
= -100μA, I
= -1.0mA, I
= -100µA, V
= -1.0mA, V
= -10mA, V
= -150mA, V
= -500mA, V
= -500mA, I
= -150mA, I
= -500mA, I
= I
= -35V, V
= -35V, V
= -10V, I
= -10V, f = 1.0MHz, I
= -0.5V, f = 1.0MHz, I
= -10V, I
= -30V, I
= -30V, I
B2
T = -50°C
= -2.0V, I
A
= -15mA
100
Test Condition
C
C
C
C
E
B
C
EB(OFF)
EB(OFF)
B
B
B
B
CE
= -1.0mA,
= -20mA,
= -150mA,
= -150mA,
CE
CE
CE
CE
= 0
= 0
= 0
= -15mA
= -50mA
= -15mA
= -50mA
B1
= -1.0V
= -1.0V
= -2.0V
= -1.0V
= -2.0V
= -15mA
= -0.4V
= -0.4V
© Diodes Incorporated
E
1,000
C
MMBT4403
= 0
= 0