HSMP-389T-TR2G Avago Technologies US Inc., HSMP-389T-TR2G Datasheet - Page 3

• Manufacturer Part Number: HSMP-389T-TR2G
• Description: DIODE PIN SWITCH 100V SOT-363
• Manufacturer: Avago Technologies US Inc.
• Type: Switchr

Specifications of HSMP-389T-TR2G

• Diode Type: PIN - Single
• Voltage - Peak Reverse (max): 100V
• Current - Max: 1A
• Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
• Resistance @ If, F: 2.5 Ohm @ 5mA, 100MHz
• Package / Case: SC-70-6, SC-88, SOT-363
• Diode Case Style: SOT-363
• No. Of Pins: 6
• Series Resistance @ If: 2.5ohm
• Peak Reflow Compatible (260 C): Yes
• Reel Quantity: 10000
• Termination Type: SMD
• Forward Test Current If: 1A
• Operating Temperature Classification: Military
• Reverse Voltage: 100V
• Mounting: Surface Mount
• Operating Temperature (max): 150C
• Operating Temperature (min): -65C
• Mounting Type: Through Hole
• Breakdown Voltage: 100V
• Rohs Compliant: Yes
• Filter Terminals: SMD
• Capacitance: 0.2pF
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power Dissipation (max): -
• Lead Free Status / Rohs Status: Compliant

Electrical Specifications, T
T est Conditions
Notes:
1. Package marking code is white.
2. Package is laser marked.
High Frequency (Low Inductance, 500 MHz – 3 GHz) PIN Diodes
T est Conditions
Note:
1. SOT-23 package marking code is white; SOT-323 is laser marked.
Typical Parameters at
3
Part Number
Number
HSMP-
489x
Part
HSMP-
389B
389C
389R
389U
389V
3890
3892
3893
3894
3895
389E
389F
389L
389T
Test Conditions
Part Number
HSMP-
389x
Package
Marking
Code
GA
Package
Marking
[1]
Code
G0
G5
G0
GU
GV
G2
G3
G4
G2
G3
G4
GL
T
S
Z
C
[2]
[2]
[2]
= 25°C
[1]
[1]
[1]
[1]
[1]
[2]
[2]
[2]
[2]
[2]
[2]
C
Configuration
Dual Anode
= 25°C, each diode
Lead
Code
U
0
2
3
4
5
B
C
R
V
E
F
L
T
Configuration
Single
Series
Common Anode
Common Cathode
Unconnected Pair
Single
Series
Common Anode
Common Cathode
Unconnected Trio
Dual Switch Mode
Low Inductance Single
Series-Shunt Pair
High Frequency Series Pair
Series Resistance
f = 100 MHz
I
F
= 1 mA
R
Breakdown
3.8
S
Minimum
Measure
I
(ý)
Voltage
V
R
V
10 µA
R
100
BR
= V
(V)
BR
Resistance
Maximum
I
F
= 5 mA
Series
R
2.5
S
(ý)
Voltage V
Breakdown
Minimum
Measure
I
V
R
Carrier Lifetime
10 µA
R
100
= V
I
F
I
= 10 mA
R
= 6 mA
τ (ns)
200
BR
BR
(V)
Capacitance
f = 1 MHz
V
Typical
C
R
Total
0.33
T
= 5 V
(pF)
Series Resistance
f = 100 MHz
Maximum
I
F
= 5 mA
R
2.5
S
(ý)
Capacitance
Maximum
f = 1 MHz
V
C
0.375
R
Total
T
= 5 V
(pF)
Total Capacitance
0.20 @ 5V
C
Total Capacitance
T
(pF)
Maximum
f = 1 MHz
V
f=500 MHz–
C
R
Inductance
0.30
T
= 5 V
(pF)
Typical
L
3 GHz
Total
T
1.0
(nH)