MMBD701LT1 ON Semiconductor, MMBD701LT1 Datasheet

MMBD701LT1

Manufacturer Part Number

MMBD701LT1

Description

DIODE SCHOTTKY 70V 200MW SOT23

Manufacturer

ON Semiconductor

Datasheets

1.MMBD701LT1G.pdf (4 pages)

2.MMBD701LT1.pdf (3 pages)

Specifications of MMBD701LT1

Diode Type

Schottky - Single

Voltage - Peak Reverse (max)

70V

Capacitance @ Vr, F

1pF @ 20V, 1MHz

Power Dissipation (max)

200mW

Package / Case

SOT-23-3, TO-236-3, Micro3™, SSD3, SST3

Capacitance

1.0 pF (Max.) @ 25°C

Capacitance, Junction

0.5 pF

Current, Forward

10 mA

Package Type

SOT-23 (TO-236)

Power Dissipation

200 mW

Primary Type

Schottky Barrier

Temperature, Junction, Maximum

+125 °C

Temperature, Operating

-55 to +125 °C

Voltage, Breakdown

70 V (Min.) @ 25°C

Voltage, Forward

0.42 V

Voltage, Repetitive Peak Reverse

70 V

Voltage, Reverse

70 V

9822

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Current - Max

Resistance @ If, F

Other names

MMBD701LT1OSCT

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MMBD701LT1

Manufacturer:

TDK

Quantity:

1 970

Company:

H&T Electronics

Part Number:

MMBD701LT1

Quantity:

910

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MMBD701LT1G

Manufacturer:

ON Semiconductor

Quantity:

47 087

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MMBD701LT1G

Manufacturer:

ON Semiconductor

Quantity:

18 500

Company:

Meier Automation Equipment Co., Limited

Part Number:

MMBD701LT1G

Manufacturer:

ONSEMI

Quantity:

20 000

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MBD701, MMBD701LT1

Silicon Hot-Carrier Diodes

Schottky Barrier Diodes

VHF detector applications. They are readily adaptable to many other

fast switching RF and digital applications. They are supplied in an

inexpensive plastic package for low−cost, high−volume consumer

and industrial/commercial requirements. They are also available in a

Surface Mount package.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

March, 2009 − Rev. 5

MAXIMUM RATINGS

ELECTRICAL CHARACTERISTICS

Reverse Voltage

Forward Power Dissipation

@ T

Derate above 25°C

Operating Junction Temperature

Range

Storage Temperature Range

Reverse Breakdown Voltage

Total Capacitance

Reverse Leakage

Forward Voltage

These devices are designed primarily for high−efficiency UHF and

Extremely Low Minority Carrier Lifetime − 15 ps (Typ)

Very Low Capacitance − 1.0 pF @ V

High Reverse Voltage − to 70 V

Low Reverse Leakage − 200 nA (Max)

Pb−Free Packages are Available

= 25°C

= 1.0 mAdc) Figure 4

= 10 mAdc) Figure 4

= 10 mAdc)

= 20 V, f = 1.0 MHz) Figure 1

= 35 V) Figure 3

Characteristic

Rating

MMBD701LT

MBD701

Preferred Device

Symbol

(BR)R

stg

= 25°C unless otherwise noted)

= 20 V

Min

−

−55 to +125

−55 to +150

Value

0.42

280

200

Typ

2.8

2.0

0.5

9.0

0.7

−

Max

200

1.0

0.5

1.0

−

mW/°C

nAdc

Unit

Vdc

°C

†For information on tape and reel specifications,

MBD701

MBD701G

MMBD701LT1

MMBD701LT1G

MMBD701LT3

MMBD701LT3G

Preferred devices are recommended choices for future use

and best overall value.

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

*Date Code orientation and/or overbar may vary

Device

depending upon manufacturing location.

(Note: Microdot may be in either location)

CATHODE

WW = Work Week

ORDERING INFORMATION

http://onsemi.com

SOT−23 (TO−236)

= Assembly Location

= Year

= Device Code (SOT−23)

= Date Code*

= Pb−Free Package

TO−92 2−Lead

CASE 182

CASE 318

(Pb−Free)

STYLE 1

STYLE 8

(Pb−Free)

Package

SOT−23

TO−92

ANODE

Publication Order Number:

ANODE

3,000 / Tape & Reel

10,000/T ape & Reel

1,000 Units / Box

Shipping

DIAGRAMS

MARKING

AYWW G

5H M G

MBD701/D

MBD

701

†

Related parts for MMBD701LT1

MMBD701LT1 Summary of contents

Page 1

... MBD701, MMBD701LT1 Preferred Device Silicon Hot-Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low−cost, high−volume consumer and industrial/commercial requirements ...

Page 2

TYPICAL ELECTRICAL CHARACTERISTICS 2.0 1.6 1.2 0 REVERSE VOLTAGE (VOLTS) R Figure 1. Total Capacitance 100° 75°C A 0.1 0. ...

Page 3

SEATING PLANE PACKAGE DIMENSIONS TO−92 (TO−226AC) CASE 182−06 ISSUE L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...

Page 4

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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