BAR 64-07 E6327 Infineon Technologies, BAR 64-07 E6327 Datasheet - Page 4

• Manufacturer Part Number: BAR 64-07 E6327
• Description: DIODE RF PAR 150V 100MA SOT-143
• Manufacturer: Infineon Technologies

Specifications of BAR 64-07 E6327

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Diode Type: PIN - 2 Independant
• Voltage - Peak Reverse (max): 150V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
• Resistance @ If, F: 1.35 Ohm @ 100mA, 100MHz
• Power Dissipation (max): 250mW
• Configuration: Dual Parallel
• Reverse Voltage: 150 V
• Forward Continuous Current: 100 mA
• Frequency Range: MF, HF, VHF, UHF, SHF
• Carrier Life: 1.55 us
• Forward Voltage Drop: 1.1 V at 50 mA
• Maximum Diode Capacitance: 0.35 pF at 20 V
• Maximum Operating Temperature: + 125 C
• Maximum Series Resistance @ Maximum If: 1.35 Ohms at 100 mA
• Maximum Series Resistance @ Minimum If: 20 Ohms at 1 mA
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Power Dissipation: 250 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAR6407E6327XT; SP000010184

Diode capacitance C
f = Parameter
Forward resistance r
f = 100MHz
Ohm
10
pF
10
10
10
10
0.7
0.5
0.4
0.3
0.2
0.1
-1
3
2
1
0
10
0
-2
2
4
10
6
-1
1 MHz
100 MHz
1 GHz
1.8 GHz
8
T
f
= (I
10
10
= (V
0
12
F
)
R
14
)
10
16
1
V
V
I
mA
F
R
20
10
2
4
Reverse parallel resistance R
f = Parameter
Forward current I
T
KOhm
A
= Parameter
10
10
10
10
10
10
10
10
10
10
10
10
10
A
-1
-1
-2
-3
-4
-5
-6
4
3
2
1
0
0
0
0
5
0.2
10
0.4
F
15
=
0.6
20
(V
F
)
100 MHz
1 GHz
1.8 GHz
25
0.8
P
2007-12-11
30
-40 °C
25 °C
85 °C
125 °C
BAR64...
= (V
V
V
V
V
R
F
R
)
1.2
40