MMBFJ309LT1G ON Semiconductor, MMBFJ309LT1G Datasheet
MMBFJ309LT1G
Specifications of MMBFJ309LT1G
MMBFJ309LT1GOS
MMBFJ309LT1GOSTR
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MMBFJ309LT1G Summary of contents
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... R 556 °C/W qJA −55 to +150 °C J stg MMBFJ309LT1G MMBFJ310LT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com 2 SOURCE 3 GATE 1 DRAIN 3 SOT−23 (TO−236) ...
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ELECTRICAL CHARACTERISTICS (T Characteristic OFF CHARACTERISTICS Gate−Source Breakdown Voltage (I = −1.0 mAdc Gate Reverse Current (V = −15 Vdc) GS Gate Reverse Current (V = −15 Vdc Gate Source Cutoff Voltage (V ...
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I Characteristics versus Gate−Source Voltage 100 1.0 k GS(off GS(off) 100 0.01 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5 ...
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25° 6 100 200 300 500 f, FREQUENCY (MHz) Figure 4. Common−Gate Y Parameter ...
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... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...