NE5520279A-A CEL, NE5520279A-A Datasheet
NE5520279A-A
Specifications of NE5520279A-A
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NE5520279A-A Summary of contents
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To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...
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All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...
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... FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology (our WSi gate laterally diffused MOS FET) and housed in a surface mount package. This device can deliver 32.0 dBm output power with 45% power added efficiency at 1 ...
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... DS D Channel to Case 3 700 µ DSS DSS f = 1.8 GHz 3.2 V, out dBm 700 mA (RF OFF), Note1 add Dset L Data Sheet PU10123EJ03V0DS NE5520279A MIN. TYP. MAX. Unit 2.8 3.0 6 2.0 3.0 V − 800 1 000 dBm MIN. TYP. MAX. Unit − − 100 nA − ...
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... OUTPUT POWER, DRAIN CURRENT η η , vs. GATE TO SOURCE VOLTAGE d add 40 2 500 f = 2.00 GHz dBm in 2 000 35 100 1 500 000 25 50 500 Gate to Source Voltage V Data Sheet PU10123EJ03V0DS NE5520279A 1 250 P out 1 000 100 I D 750 75 η d η add 500 50 250 ( (dBm) out ...
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... Microwave] → [Device Parameters] URL http://www.csd-nec.com/ LARGE SIGNAL IMPEDANCE ( (GHz) Z (Ω 1.77 −j6.71 1.25 −j5.73 1.8 Note Z is the conjugate of optimum load impedance at given voltage, idling current, input power and frequency 3 700 mA 1.8 GHz) D Note (Ω) OL Data Sheet PU10123EJ03V0DS NE5520279A ...
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... EVALUATION BOARD FOR 1.8 GHz Symbol C1 Circuit Board 32.0 Value Comment 4.7 pF 2.4 pF 2 000 pF 0.22 µ F 3.3 µ 16V 1 000 Ω 0.4 mm, ε 4.5 R4775 Data Sheet PU10123EJ03V0DS NE5520279A Unit : 30 ...
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... PACKAGE RECOMMENDED P.C.B. LAYOUT (UNIT: mm) Gate 6 (Bottom View) 1.5±0.2 Source Drain Gate 3.6±0.2 4.0 1.7 Source Stop up the hole with a rosin or something to avoid solder flow. Drain φ Through Hole: 0.2 × 33 0.5 0.5 6.1 Data Sheet PU10123EJ03V0DS NE5520279A Drain 0.8 MAX. ...
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... Data Sheet PU10123EJ03V0DS NE5520279A For soldering Condition Symbol IR260 VP215 WS260 HS350-P3 7 ...
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... NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). 8 Please check with an NEC sales representative for Data Sheet PU10123EJ03V0DS NE5520279A The M8E 00 0110 ...
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... TEL: +852-3107-7303 Taipei Branch Office TEL: +886-2-8712-0478 TEL: +82-2-558-2120 Korea Branch Office NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-01 FAX: +49-211-6503-487 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 http://www.csd-nec.com/ FAX: +852-3107-7309 FAX: +886-2-2545-3859 FAX: +82-2-558-5209 NE5520279A 0306 ...