NE3517S03-T1D-A CEL, NE3517S03-T1D-A Datasheet

no-image

NE3517S03-T1D-A

Manufacturer Part Number
NE3517S03-T1D-A
Description
FET RF HFET 20GHZ 2V 10MA S03
Manufacturer
CEL
Datasheet

Specifications of NE3517S03-T1D-A

Transistor Type
HFET
Frequency
20GHz
Gain
13.5dB
Voltage - Rated
4V
Current Rating
70mA
Noise Figure
0.7dB
Current - Test
10mA
Voltage - Test
2V
Package / Case
S03
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Document No. PG10787EJ01V0DS (1st edition)
Date Published November 2009 NS
FEATURES
• Super low noise figure, high associated gain
• K-band Micro-X plastic (S03) package
APPLICATIONS
• 20 GHz band DBS LNB
• Other K-band communication systems
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
NE3517S03-T1C
NE3517S03-T1D
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Remark To order evaluation samples, please contact your nearby sales office.
Note Mounted on 1.08 cm
Part Number
NF = 0.7 dB TYP., G
Part number for sample order: NE3517S03-A
Parameter
NE3517S03-T1C-A
NE3517S03-T1D-A
Order Number
a
K-BAND SUPER LOW NOISE AMPLIFIER
= 13.5 dB TYP. @ f = 20 GHz
2
 1.0 mm (t) glass epoxy PCB
HETERO JUNCTION FIELD EFFECT TRANSISTOR
Symbol
P
tot
V
S03 (Pb-Free)
V
T
T
I
I
DS
GS
G
stg
N-CHANNEL GaAs HJ-FET
D
ch
Note
Package
A
= +25C)
65 to +125
2 kpcs/reel
10 kpcs/reel
Ratings
Quantity
+125
I
100
165
3
DSS
4
Marking
E
Unit
mW
mA
C
C
V
V
A
• 8 mm wide embossed taping
• Pin 4 (Gate) faces the perforation side
of the tape
NE3517S03
Supplying Form

Related parts for NE3517S03-T1D-A

NE3517S03-T1D-A Summary of contents

Page 1

... Other K-band communication systems ORDERING INFORMATION Part Number Order Number NE3517S03-T1C NE3517S03-T1C-A NE3517S03-T1D NE3517S03-T1D-A Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: NE3517S03-A ABSOLUTE MAXIMUM RATINGS (T Parameter Drain to Source Voltage Gate to Source Voltage ...

Page 2

... Associated Gain +25C) A MIN. TYP. MAX. Unit   0 dBm in = +25C, unless otherwise specified) A Test Conditions =   100 mA GHz Data Sheet PG10787EJ01V0DS NE3517S03 MIN. TYP. MAX. Unit   0 0.2 0.7 1.5 V   0.7 1.0 dB  11.0 13.5 dB ...

Page 3

... TYPICAL CHARACTERISTICS (T A Remark The graphs indicate nominal characteristics. = +25C, unless otherwise specified) Data Sheet PG10787EJ01V0DS NE3517S03 3 ...

Page 4

... S-PARAMETERS 4 Data Sheet PG10787EJ01V0DS NE3517S03 ...

Page 5

... RF MEASURING LAYOUT PATTERN (REFERENCE ONLY) (UNIT: mm) RT/duroid 5880/ROGERS t = 0.254 mm r = 2.20 tan delta = 0.0009 @10 GHz Au-flash plate Data Sheet PG10787EJ01V0DS NE3517S03 5 ...

Page 6

... PACKAGE DIMENSIONS S03 (UNIT: mm) 6 Data Sheet PG10787EJ01V0DS NE3517S03 ...

Page 7

... Caution Do not use different soldering methods together (except for partial heating). Soldering Conditions : 260C or below : 10 seconds or less : 60 seconds or less : 12030 seconds : 3 times : 0.2%(Wt.) or below : 350C or below : 3 seconds or less : 0.2%(Wt.) or below Data Sheet PG10787EJ01V0DS NE3517S03 Condition Symbol IR260 HS350 7 ...

Page 8

... Data Sheet PG10787EJ01V0DS NE3517S03 ...

Page 9

... Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. • Do not burn, destroy, cut, crush, or chemically dissolve the product. • Do not lick the product or in any way allow it to enter the mouth. NE3517S03 ...

Related keywords