NE3509M04-A CEL, NE3509M04-A Datasheet - Page 7

AMP HJ-FET 2GHZ 4-SMINI

NE3509M04-A

Manufacturer Part Number
NE3509M04-A
Description
AMP HJ-FET 2GHZ 4-SMINI
Manufacturer
CEL
Datasheet

Specifications of NE3509M04-A

Transistor Type
HFET
Frequency
2GHz
Gain
17.5dB
Voltage - Rated
4V
Current Rating
60mA
Noise Figure
0.4dB
Current - Test
10mA
Voltage - Test
2V
Power - Output
11dBm
Package / Case
S-Mini 4P
Gate-source Cutoff Voltage
- 0.5 V
Mounting Style
SMD/SMT
Forward Transconductance Gfs (max / Min)
80 mS
Gate-source Breakdown Voltage
- 3 V
Continuous Drain Current
10 mA
Power Dissipation
150 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
NE3509M04-T2-A
NE3509M04
MOUNTING PAD DIMENSIONS (REFERENCE ONLY)
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) PACKAGE (UNIT: mm)
1.6
0.6
7
Data Sheet PG10608EJ01V0DS

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