NE5531079A-T1A-A CEL, NE5531079A-T1A-A Datasheet

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NE5531079A-T1A-A

Manufacturer Part Number
NE5531079A-T1A-A
Description
FET RF LDMOS 460MHZ 30V 79A
Manufacturer
CEL
Datasheet

Specifications of NE5531079A-T1A-A

Transistor Type
LDMOS
Frequency
460MHz
Voltage - Rated
30V
Current Rating
3A
Current - Test
200mA
Voltage - Test
7.5V
Power - Output
40dBm
Package / Case
79A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Noise Figure
-
Document No. PU10752EJ01V0DS (1st edition)
Date Published April 2009 NS
DESCRIPTION
transmission power amplifier for 7.5 V radio systems. Die are manufactured using our NEWMOS-M1 technology and
housed in a surface mount package. This device can deliver 40.0 dBm output power with 68% power added
efficiency at 460 MHz with 7.5 V supply voltage.
FEATURES
• High output power
• High power added efficiency :
• High linear gain
• Surface mount package
• Single supply
APPLICATIONS
• 460 MHz band radio systems
• 900 MHz band radio systems
ORDERING INFORMATION
NE5531079A
NE5531079A-T1
NE5531079A-T1A
Remark To order evaluation samples, please contact your nearby sales office.
The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the
Part Number
Part number for sample order: NE5531079A-A
7.5 V OPERATION SILICON RF POWER LDMOS FET
FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
NE5531079A-A
NE5531079A-T1-A
NE5531079A-T1A-A
Order Number
: P
: G
: 5.7  5.7  1.1 mm MAX.
: V
add
out
DS
L
= 20.5 dB TYP. (V
= 40.0 dBm TYP. (V
= 7.5 V MAX.
= 68% TYP. (V
79A (Pb-Free)
Package
DS
DS
= 7.5 V, I
Marking
= 7.5 V, I
DS
W5
= 7.5 V, I
Dset
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 1 kpcs/reel
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 5 kpcs/reel
Dset
= 200 mA, f = 460 MHz, P
Dset
= 200 mA, f = 460 MHz, P
SILICON POWER MOS FET
= 200 mA, f = 460 MHz, P
NE5531079A
Supplying Form
in
= 25 dBm)
in
= 10 dBm)
in
= 25 dBm)

Related parts for NE5531079A-T1A-A

NE5531079A-T1A-A Summary of contents

Page 1

... Part Number Order Number NE5531079A NE5531079A-A NE5531079A-T1 NE5531079A-T1-A NE5531079A-T1A NE5531079A-T1A-A Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: NE5531079A-A Document No. PU10752EJ01V0DS (1st edition) Date Published April 2009 NS SILICON POWER MOS FET = 40.0 dBm TYP ...

Page 2

... 700100  DSS DSS f = 460 MHz 7.5 V, out dBm 200 mA (RF OFF) add Dset Note Data Sheet PU10752EJ01V0DS NE5531079A MIN. TYP. MAX. Unit  6.0 7.5 V 1.15 1.55 2.05 V   2.0 A  dBm MIN. TYP. MAX. Unit  ...

Page 3

... Chip Resistor   L1 123 nH 0.5 mm,  PCB R4775 0.4 mm, Type American Technical Ceramics American Technical Ceramics American Technical Ceramics American Technical Ceramics mm, 10 Turns  4.5, size = 30  Data Sheet PU10752EJ01V0DS NE5531079A Maker Murata Murata Murata   Ohesangyou  3 ...

Page 4

... ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD USING THE NEC EVALUATION BOARD Symbol Value  000 pF C10 10 pF C11 24 pF C20 27 pF C21 1.8 pF C22 100 pF R1 4.7 k 150  123 nH 4 Data Sheet PU10752EJ01V0DS NE5531079A ...

Page 5

... TYPICAL CHARACTERISTICS (T A Remark The graphs indicate nominal characteristics. = +25 200 mA, unless otherwise specified) set Data Sheet PU10752EJ01V0DS NE5531079A 5 ...

Page 6

... S-PARAMETERS 6 Data Sheet PU10752EJ01V0DS NE5531079A ...

Page 7

... PACKAGE DIMENSIONS 79A (UNIT: mm) 79A PACKAGE RECOMMENDED P.C.B. LAYOUT (UNIT: mm) Data Sheet PU10752EJ01V0DS NE5531079A 7 ...

Page 8

... Soldering Conditions : 260C or below : 10 seconds or less : 60 seconds or less : 12030 seconds : 3 times : 0.2%(Wt.) or below : 260C or below : 10 seconds or less : 1 time : 0.2%(Wt.) or below : 350C or below : 3 seconds or less : 0.2%(Wt.) or below Data Sheet PU10752EJ01V0DS NE5531079A Condition Symbol IR260 WS260 HS350-P3 ...

Page 9

... NE5531079A ...

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