NE651R479A-A CEL, NE651R479A-A Datasheet
NE651R479A-A
Specifications of NE651R479A-A
Related parts for NE651R479A-A
NE651R479A-A Summary of contents
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... TYP at 1.9 GHz • LOW THERMAL RESISTANCE: 30°C/W DESCRiPTiON NEC's NE651R479A is a GaAs HJ-FET designed for medium power mobile communications, Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and MMDS transmitter and subscriber applications capable of delivering 0.5 Watts of output power (CW) at 3.5 V, and 1 Watt of output power (CW with high linear gain, high efficiency, and excellent linearity ...
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... A 1 Note Recommended maximum gain compression 4 °C 150 ORDERiNG iNFORMATiON °C -65 to +150 PART NuMBER NE651R479A-T1-A NE651R479A-A Note: 1. Embossed Tape wide 25°C) C TYP MAX TEST CONDiTiONS 27 900 MHz +13 dBm (RF OFF) DSQ 60 230 PARAMETER uNiTS MiN TYP MAX ...
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TYPiCAL PERFORMANCE CuRVES TRANSCONDUCTANCE AND DRAIN CURRENT vs. GATE VOLTAGE 1.50 1.20 0.90 0.60 0.30 0.00 -1.20 Gate Voltage, V (V) G DRAIN CURRENT vs. DRAIN VOLTAGE 1.5 1.25 1.00 0.75 0.5 0. Drain ...
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TYPiCAL SCATTERiNG PARAMETERS j50 j25 4.0 4.0 j10 S22 100 0 0.5 S11 -j10 0.5 -j25 -j50 100 FREQuENCY S 11 GHz MAG ANG 0.50 0.905 -171.35 7.390 ...
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TYPiCAL SCATTERiNG PARAMETERS j50 4.0 j25 4.0 j10 S22 100 0 0.5 S11 0.5 -j10 -j25 -j50 FREQuENCY S 11 GHz MAG ANG 0.50 0.89 -168.01 0.60 ...
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... U1 100637 NE65XXX79A-EV .034 L = .890 L = .874 .010 W = .010 R6 NE651R479A C4 TEST CIRCUIT BLK 2-56 X 3/16 PHILLIPS PAN HEAD CASE 1 100 pF CAP MURATA 0603 200 OHM RESISTOR ROHM CASE A 5.1 pF CAP ATC CASE A 2.0 pF CAP ATC CASE A 1.5 pF CAP ATC CASE A 1uF KEMET 0805 1uF CAP MURATA ...
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TYPiCAL APPLiCATiON CiRCuiT PERFORMANCE at V GAiN AND SATuRATED POWER vs. FREQuENCY Gain (db) 3 Gain (db) 3 250 (db) 3.5 V ...
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TYPiCAL APPLiCATiON CiRCuiT PERFORMANCE at VDS = 2.66 GHz OuTPuT POWER vs. iNPuT POWER 34 Test Condition: Circuit optimized for P-2dB from 2.64 to 2.69 GHz 32 Instantaneous Bandwidth when biasing ...
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... RECOMMENDED SOLDERiNG CONDiTiONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recom- mended below, contact your CEL sales representative. SOLDERiNG METHOD Infrared Reflow Package peak temperature: 235 ˚C or below Time: 30 seconds or less (at 210 ˚C) ...
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NONLiNEAR MODEL SCHEMATiC GATE FET NONLiNEAR MODEL PARAMETERS Parameters Q1 Parameters VTO -0.9255 RG VTOSC 0 RD ALPHA 1.5 RS BETA 0.964 RGMET GAMMA 0 KF GAMMADC 0.002 AF (2) Q 1.5 TNOM DELTA 0 XTI VBI 0 ...
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... CAS numbers and other limited information may not be available for release event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. ...