MMBT918LT1G ON Semiconductor, MMBT918LT1G Datasheet

TRANS SS VHF NPN 15V SOT23

MMBT918LT1G

Manufacturer Part Number
MMBT918LT1G
Description
TRANS SS VHF NPN 15V SOT23
Manufacturer
ON Semiconductor
Datasheet

Specifications of MMBT918LT1G

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
600MHz
Noise Figure (db Typ @ F)
6dB @ 60MHz
Gain
11dB
Power - Max
225mW
Dc Current Gain (hfe) (min) @ Ic, Vce
20 @ 3mA, 1V
Current - Collector (ic) (max)
50mA
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
3 V
Continuous Collector Current
0.05 A
Maximum Dc Collector Current
0.05 A
Power Dissipation
225 mW
Maximum Operating Frequency
600 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
20 at 3 mA at 1 V
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MMBT918LT1GOSTR

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MMBT918LT1G
VHF/UHF Transistor
NPN Silicon
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 6
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation FR− 5 Board,
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
(Note 1) T
Derate above 25°C
Substrate, (Note 2) T
Derate above 25°C
Characteristic
A
= 25°C
Rating
A
= 25°C
Symbol
Symbol
T
V
V
V
R
R
J
P
P
, T
CEO
CBO
EBO
I
qJA
qJA
C
D
D
stg
−55 to +150
Value
Max
225
556
300
417
3.0
1.8
2.4
15
30
50
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
mW
°C
†For information on tape and reel specifications,
MMBT918LT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Device
(Note: Microdot may be in either location)
ORDERING INFORMATION
M3B = Device Code
M
G
BASE
MARKING DIAGRAM
http://onsemi.com
1
SOT−23 (TO−236)
1
1
(Pb−Free)
= Date Code*
= Pb−Free Package
Package
SOT−23
CASE 318
COLLECTOR
STYLE 6
M3B M G
EMITTER
2
G
Publication Order Number:
3
2
3
3000 / Tape & Reel
MMBT918LT1/D
Shipping

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MMBT918LT1G Summary of contents

Page 1

... P D 300 mW 2.4 mW/°C R 417 °C/W qJA −55 to +150 °C J stg MMBT918LT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com COLLECTOR 3 1 BASE 2 EMITTER SOT−23 (TO−236) ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (I = 3.0 mAdc Collector −Base Breakdown Voltage (I = 1.0 mAdc Emitter −Base Breakdown Voltage ( mAdc, I ...

Page 3

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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