NE85630-R25-A CEL, NE85630-R25-A Datasheet - Page 4

• Manufacturer Part Number: NE85630-R25-A
• Description: TRANSISTOR NPN 1GHZ SOT-323
• Manufacturer: CEL

Specifications of NE85630-R25-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 4.5GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 2.2dB @ 1GHz ~ 2GHz
• Gain: 6dB ~ 12dB
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 7mA, 3V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: SOT-323
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Continuous Collector Current: 0.1 A
• Power Dissipation: 150 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
10
16
14
12
10
10
25
20
15
7
3
5
2
1
8
4
6
5
0
1
1
0.1
V
f = 1 GHz
V
AND MAXIMUM AVAILABLE GAIN
CE
CE
GAIN BANDWIDTH PRODUCT
FORWARD INSERTION GAIN
2
vs. COLLECTOR CURRENT
= 10 V
= 10 V
2
Collector Current, I
COLLECTOR CURRENT
Collector Current, I
0.2
INSERTION GAIN vs.
3
3
vs. FREQUENCY
Frequency, f (GHz)
5
5
0.3
NE85634
7
7 10
10
|S
0.5
21E
|
2
C
20 30
0.7
20 30
C
(mA)
(mA)
MAG
NE85632
NE85634
NE85633
V
I
NE85633
NE85635
NE85632
NE85634
C
1.0
CE
= 20 mA
= 10 V
(T
50 70 100
50 70 100
A
= 25 °C)
2.0
-80
-70
-60
-50
-40
-30
10
24
16
12
20
15
20
25
-5
5
0
8
4
0
0.1
20
1
AND MAXIMUM AVAILABLE GAIN
INTERMODULATION DISTORTION
V
CE
FORWARD INSERTION GAIN
0.2 0.3
vs. COLLECTOR CURRENT
= 10 V
2
COLLECTOR CURRENT
30
Collector Current, I
NE85632 AND NE85634
Collector Current, I
INSERTION GAIN vs.
Frequency, f (GHz)
vs. FREQUENCY
V
V
R
IM
IM
CE
O
G
0.5
2
3
= 100 dBμV/50 Ω
5
= R
f = 2
= 10 V
f = 90 + 100 MHz
NE85635
NE85635
40
L
= 50 Ω
X
10
200-190 MHz
1
|S
50
21E
20
2
f = 2 GHz
|
C
f = 500 MHz
f = 1 GHz
2
C
NE856 SERIES
(mA)
V
I
C
(mA)
CE
= 20 mA
MAG
60
= 10 V
50
IM
IM
5
2
3
100
70
10