NE68019-T1 CEL, NE68019-T1 Datasheet - Page 4

• Manufacturer Part Number: NE68019-T1
• Description: TRANS NPN 2GHZ SMD
• Manufacturer: CEL

Specifications of NE68019-T1

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 10GHz
• Noise Figure (db Typ @ F): 1.7dB ~ 1.9dB @ 1GHz ~ 2GHz
• Gain: 9.6dB ~ 13.5dB
• Power - Max: 100mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 3V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: Surface Mount
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 2SC5008; NE68019-T1TR; NE68019-TR; NE68019TR

TYPICAL PERFORMANCE CURVES
500
200
100
300
0.7
0.5
0.3
0.2
70
50
30
20
10
0.1
3
2
4
1
0
5
5
3
2
1
1
1
COLLECTOR TO BASE CAPACITANCE
1
vs. COLLECTOR TO BASE VOLTAGE
Collector to Base Voltage, V
FORWARD CURRENT GAIN
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
2
2
Collector Current, I
Collector Current, I
2
3
3
NOISE FIGURE
3
NE68035
5
5
7
7
f = 2 GHz
5
10
f = 4 GHz
10
7
C
C
(mA)
(mA)
V
CE
NE68035
NE68033
20
20
V
10
CB
= 6 V
CE
30
(V)
= 6 V
30
50
50
20
(TA = 25°C)
5
3
2
1
0
4
10
7
5
3
2
1
1
1
GAIN BANDWIDTH PRODUCT vs.
NOISE FIGURE vs. COLLECTOR
Collector Current, I
COLLECTOR CURRENT
Collector Current, I
2
2
3
3
CURRENT
NE68033
5
5
7
7
C
C
(mA)
(mA)
10
10
V
f = 2 GHz
V
CE
CE
= 6 V
= 6 V
20
20