ST110S16P0 Vishay, ST110S16P0 Datasheet - Page 2

• Manufacturer Part Number: ST110S16P0
• Description: SCR PHASE CONT 1600V 110A TO-94C
• Manufacturer: Vishay

Specifications of ST110S16P0

• Scr Type: Standard Recovery
• Voltage - Off State: 1600V
• Voltage - Gate Trigger (vgt) (max): 3V
• Voltage - On State (vtm) (max): 1.52V
• Current - On State (it (av)) (max): 110A
• Current - On State (it (rms)) (max): 175A
• Current - Gate Trigger (igt) (max): 150mA
• Current - Hold (ih) (max): 600mA
• Current - Off State (max): 20mA
• Current - Non Rep. Surge 50, 60hz (itsm): 2700A, 2830A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis, Stud Mount
• Package / Case: TO-209AC, TO-94
• Current - On State (it (rms) (max): 175A
• Breakover Current Ibo Max: 2830 A
• Rated Repetitive Off-state Voltage Vdrm: 1600 V
• Off-state Leakage Current @ Vdrm Idrm: 20 mA
• Forward Voltage Drop: 1.52 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 150 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Stud
• Peak Repetitive Off-state Voltage, Vdrm: 1.6kV
• Gate Trigger Current Max, Igt: 150mA
• Current It Av: 110A
• On State Rms Current It(rms): 175A
• Peak Non Rep Surge Current Itsm 50hz: 2.7kA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *ST110S16P0

ST110SPbF Series
Vishay Semiconductors
www.vishay.com
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle
non-repetitive surge current
Maximum I
Maximum I
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Typical latching current
SWITCHING
PARAMETER
Maximum non-repetitive rate of
rise of turned-on current
Typical delay time
Typical turn-off time
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
2
2
t for fusing
t for fusing
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SYMBOL
SYMBOL
SYMBOL
V
V
I
dV/dt
I
T(RMS)
dI/dt
I
I
I
RRM
T(TO)1
T(TO)2
V
T(AV)
I
DRM
TSM
Phase Control Thyristors
I
2
r
r
I
t
t
I
2
TM
t1
t2
H
t
L
d
q
t
(Stud Version), 110 A
,
T
T
180° conduction, half sine wave
DC at 85 °C case temperature
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x  x I
(I >  x I
(16.7 % x  x I
(I >  x I
I
T
Gate drive 20 V, 20 , t
T
Gate current 1 A, dI
V
I
V
TM
pk
J
J
J
J
d
R
= T
= T
= T
= 25 °C, anode supply 12 V resistive load
= 0.67 % V
= 50 V, dV/dt = 20 V/μs, gate 0 V 100 , t
= 350 A, T
= 100 A, T
J
J
J
maximum linear to 80 % rated V
maximum, anode voltage  80 % V
maximum, rated V
T(AV)
T(AV)
), T
), T
J
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
DRM
J
T(AV)
T(AV)
= T
J
J
= T
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
= T
= T
, T
J
J
< I <  x I
< I <  x I
maximum, t
g
J
J
maximum, dI/dt = 10 A/μs,
J
/dt = 1 A/μs
maximum
maximum
= 25 °C
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RRM
RRM
r
 1 μs
DRM
T(AV)
T(AV)
Sinusoidal half wave,
initial T
/V
p
RRM
), T
), T
= 10 ms sine pulse
J
J
applied
J
= T
= T
= T
DRM
J
J
J
maximum
maximum
DRM
maximum
p
= 500 μs
Document Number: 94393
VALUES
VALUES
VALUES
Revision: 17-Aug-10
2700
2830
2270
2380
1000
36.4
33.2
25.8
23.5
0.90
0.92
1.79
1.81
1.52
500
100
500
110
175
364
600
2.0
20
90
UNITS
UNITS
UNITS
kA
A/μs
kA
V/μs
m
mA
mA
°C
μs
A
A
V
V
2
2
s
s