BT151S-650L,118 NXP Semiconductors, BT151S-650L,118 Datasheet - Page 4

• Manufacturer Part Number: BT151S-650L,118
• Description: THYRISTOR 500V 12A DPAK
• Manufacturer: NXP Semiconductors

Specifications of BT151S-650L,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Scr Type: Standard Recovery
• Voltage - Off State: 650V
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Voltage - On State (vtm) (max): 1.75V
• Current - On State (it (av)) (max): 7.5A
• Current - On State (it (rms)) (max): 12A
• Current - Gate Trigger (igt) (max): 5mA
• Current - Hold (ih) (max): 20mA
• Current - Off State (max): 500µA
• Current - Non Rep. Surge 50, 60hz (itsm): 120A, 132A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Current - On State (it (rms) (max): 12A
• Rated Repetitive Off-state Voltage Vdrm: 650 V
• Breakover Current Ibo Max: 132 A
• On-state Rms Current (it Rms): 12 A
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Gate Trigger Voltage (vgt): 0.4 V
• Gate Trigger Current (igt): 2 mA
• Holding Current (ih Max): 20 mA
• Forward Voltage Drop: 1.4 V
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Repetitive Peak Forward Blocking Voltage: 650 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934060605118; BT151S-650L /T3; BT151S-650L /T3

NXP Semiconductors
BT151S_SER_L_R_5
Product data sheet
Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
Fig 4. RMS on-state current as a function of surge
I
T(RMS)
I
TSM
(A)
(A)
10
10
10
25
20
15
10
5
0
3
2
10
10
t
f = 50 Hz; T
duration; maximum values
p
5
2
10 ms
mb
10
dl
103 C
1
T
/dt limit
1
surge duration (s)
10
001aaa954
4
Rev. 05 — 9 October 2006
10
Fig 5. RMS on-state current as a function of mounting
I
T(RMS)
(A)
BT151S series L and R
16
12
8
4
0
base temperature; maximum values
50
10
3
0
50
t
T
p
I
T
j
(s)
initial = 25 C max
t
p
100
© NXP B.V. 2006. All rights reserved.
T
001aaa956
001aaa998
mb
I
TSM
( C)
t
10
150
Thyristors
2
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