TS420-600T STMicroelectronics, TS420-600T Datasheet - Page 5

• Manufacturer Part Number: TS420-600T
• Description: SCR 4A 200UA 600V TO-220AB
• Manufacturer: STMicroelectronics

Specifications of TS420-600T

• Scr Type: Sensitive Gate
• Voltage - Off State: 600V
• Voltage - Gate Trigger (vgt) (max): 800mV
• Voltage - On State (vtm) (max): 1.6V
• Current - On State (it (av)) (max): 2.5A
• Current - On State (it (rms)) (max): 4A
• Current - Gate Trigger (igt) (max): 200µA
• Current - Hold (ih) (max): 5mA
• Current - Off State (max): 5µA
• Current - Non Rep. Surge 50, 60hz (itsm): 30A, 33A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: TO-220AB
• Current - On State (it (rms) (max): 4A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TS420
Figure 7.
Figure 9.
Figure 11. On-state characteristics (maximum
50.0
10.0
10.00
35
30
25
20
15
10
1.0
1.00
0.10
5
0
0.01
0.1
1
I
TSM
0.0
I
0
dV/dt[R
TM
(A)
(A)
V =0.85V
R =90m
T max.:
t0
d
200
j
0.5
T
j
=max
GK
Relative variation of dV/dt immunity
versus gate-cathode resistance
(typical values)
Surge peak on-state current versus
number of cycles)
values)
T =115°C
Repetitive
400
C
] / dV/dt[
1.0
600
10
R
1.5
Non repetitive
T initial=25°C
Number of cycles
800
j
T =25°C
GK
j
R
=220 ]
V
GK
1000
TM
2.0
(k )
(V)
1200
2.5
100
1400
3.0
1600
t =10ms
V = 0.67 x V
p
D
One cycle
T
j
= 125°C
3.5
1800
Doc ID 5203 Rev 4
DRM
2000
1000
4.0
Figure 8.
Figure 10. Non-repetitive surge peak on-state
Figure 12. Thermal resistance junction to
10
300
100
100
8
6
4
2
0
10
80
60
40
20
0
1
0
0.01
dV/dt[C
R
0
I
th(j-a)
TSM
dI/dt limitation
Sinusoidal pulse with
width tp < 10 ms
2
2
(A), I t (A s)
GK
(°C/W)
4
] / dV/dt[
Relative variation of dV/dt immunity
versus gate-cathode capacitance
(typical values)
current, and corresponding values
of I²t
ambient versus copper surface
under tab (DPAK)
2
4
6
2
6
0.10
R
GK
8
=220 ]
8
10
C
S(cm²)
t (ms)
p
GK
10
(nF)
12
Epoxy printed circuit board FR4
copper thickness = 35 µm
12
14
1.00
Characteristics
14
16
16
18
T initial = 25°C
V = 0.67 x V
j
I t
I
2
TSM
D
R
T
GK
j
= 125°C
= 220
18
20
DRM
10.00
5/11
22
20