NCR169DG | |
|---|---|
| Manufacturer Part Number | NCR169DG |
| Description | SCR 0.8A 400V TO-92 |
| Manufacturer | ON Semiconductor |
| NCR169DG datasheets |
|
Availability: By request
International delivery:
Warranty: 60 days
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Specifications of NCR169DG | |||
|---|---|---|---|
| Scr Type | Sensitive Gate | Voltage - Off State | 400V |
| Voltage - Gate Trigger (vgt) (max) | 800mV | Voltage - On State (vtm) (max) | 1.7V |
| Current - On State (it (rms)) (max) | 800mA | Current - Gate Trigger (igt) (max) | 200µA |
| Current - Hold (ih) (max) | 5mA | Current - Off State (max) | 10µA |
| Current - Non Rep. Surge 50, 60hz (itsm) | 10A @ 60Hz | Operating Temperature | -40°C ~ 110°C |
| Mounting Type | Through Hole | Package / Case | TO-92-3 (Standard Body), TO-226 |
| Current - On State (it (rms) (max) | 800mA | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Current - On State (it (av)) (max) | - | ||
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NCR169D
General Purpose
Sensitive Gate
Silicon Controlled Rectifier
Reverse Blocking Thyristor
PNPN device designed for line-powered general purpose
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in a cost effective plastic TO-226AA package.
Features
•
Sensitive Gate Allows Direct Triggering by Microcontrollers and
Other Logic Circuits
•
On−State Current Rating of 0.8 Amperes RMS at 80°C
•
Surge Current Capability − 10 Amperes
•
Immunity to dV/dt − 20 V/μsec Minimum at 110°C
•
Glass-Passivated Surface for Reliability and Uniformity
•
Device Marking: NCR169D, Date Code
•
Pb−Free Packages are Available
MAXIMUM RATINGS
(T
= 25°C unless otherwise noted)
J
Rating
Peak Repetitive Off−State Voltage (Note 1.)
= *40 to 110°C, Sine Wave, 50 to
(T
J
60 Hz; Gate Open)
On-State RMS Current
(T
= 80°C) 180° Conduction Angles
C
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz,
T
= 25°C)
J
Circuit Fusing Consideration (t = 10 ms)
Forward Peak Gate Power
μ
= 25°C, Pulse Width v 1.0
(T
s)
A
Forward Average Gate Power
(T
= 25°C, t = 20 ms)
A
Forward Peak Gate Current
μ
= 25°C, Pulse Width v 1.0
(T
s)
A
Reverse Peak Gate Voltage
μ
= 25°C, Pulse Width v 1.0
(T
s)
A
Operating Junction Temperature Range
@ Rate V
and V
RRM
DRM
Storage Temperature Range
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V
and V
for all types can be applied on a continuous basis. Ratings
DRM
RRM
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
© Semiconductor Components Industries, LLC, 2005
October, 2005 − Rev. 1
Symbol
Value
Unit
V
400
Volts
DRM,
V
RRM
I
0.8
Amp
T(RMS)
I
10
Amps
TSM
2
2
I
t
0.415
A
s
P
0.1
Watt
GM
P
0.10
Watt
G(AV)
I
1.0
Amp
GM
V
5.0
Volts
GRM
°C
T
−40 to
J
110
°C
T
−40 to
stg
150
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
1
http://onsemi.com
SCR
0.8 AMPERES RMS
400 VOLTS
G
A
K
MARKING
DIAGRAM
NCR
169D
ALYWWG
G
K
G
A
TO−92
(TO−226AA)
CASE 029
STYLE 10
1 2 3
A
= Assembly Location
L
= Wafer Lot
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
1
Cathode
2
Gate
3
Anode
ORDERING INFORMATION
Publication Order Number:
NCR169D/D
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NCR169DG Summary of contents |
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