NYC0102BLT1G ON Semiconductor, NYC0102BLT1G Datasheet

NYC0102BLT1G

Manufacturer Part Number

NYC0102BLT1G

Description

SCR REVERSE BLOCK THY SOT-23

Manufacturer

ON Semiconductor

Datasheet

1.NYC0102BLT1G.pdf (5 pages)

Specifications of NYC0102BLT1G

Scr Type

Sensitive Gate

Voltage - Off State

200V

Voltage - Gate Trigger (vgt) (max)

800mV

Voltage - On State (vtm) (max)

1.7V

Current - On State (it (rms)) (max)

250mA

Current - Gate Trigger (igt) (max)

200µA

Current - Hold (ih) (max)

6mA

Current - Off State (max)

1µA

Current - Non Rep. Surge 50, 60hz (itsm)

7A @ 60Hz

Operating Temperature

-40°C ~ 125°C

Mounting Type

Surface Mount

Package / Case

SOT-23-3, TO-236-3, Micro3™, SSD3, SST3

Current - On State (it (rms) (max)

250mA

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - On State (it (av)) (max)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NYC0102BLT1G

Manufacturer:

Quantity:

15 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NYC0102BLT1G

Manufacturer:

Quantity:

30 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

NYC0102BLT1G

Manufacturer:

ON/安森美

Quantity:

20 000

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NYC0102BLT1G

Sensitive Gate

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

switching applications.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. V

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

April, 2010 − Rev. 1

Peak Repetitive Off−State Voltage (Note 1)

Wave, 50 to 60 Hz

On-State Current RMS

(180° Conduction Angle, T

Peak Non-repetitive Surge Current,

Circuit Fusing Considerations (t = 8.3 ms)

Forward Peak Gate Power

(Pulse Width ≤ 1.0 msec, T

Forward Average Gate Power

(t = 8.3 msec, T

Forward Peak Gate Current

(Pulse Width ≤ 20 ms, T

Reverse Peak Gate Voltage

(Pulse Width ≤ 1.0 ms, T

Operating Junction Temperature Range

@ Rated V

Storage Temperature Range

Total Device Dissipation FR− 5 Board

Thermal Resistance, Junction−to−Ambient

Designed and tested for highly−sensitive triggering in low-power

High dv/dt

Gating Current < 200 mA

Miniature SOT−23 Package for High Density PCB

This is a Halogen−Free Device

This is a Pb−Free Device

apply for zero or negative gate voltage; however, positive gate voltage shall

not be applied concurrent with negative potential on the anode. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

= 25°C, (1/2 Cycle, Sine Wave, 60 Hz)

DRM

= IK, T

= 25°C

and V

RRM

= *40 to +110°C, Sine

Characteristic

RRM

and V

= 25°C)

Rating

for all types can be applied on a continuous basis. Ratings

DRM

= 25°C)

= 25°C unless otherwise noted)

= 25°C)

= 80°C)

Symbol

T(RMS)

G(AV)

FGM

DRM,

TSM

RGM

RRM

qJA

stg

−40 to

Value

+125

+150

0.25

0.02

Max

200

225

380

7.0

0.2

0.1

0.5

8.0

°C/W

Unit

°C

NYC0102BLT1G

†For information on tape and reel specifications,

*Date Code orientation and/or overbar may vary de-

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

pending upon manufacturing location.

0.25 AMP, 200 VOLT SCRs

(Note: Microdot may be in either location)

Device

CASE 318

STYLE 8

SOT−23

ORDERING INFORMATION

C2B = Specific Device Code

http://onsemi.com

PIN ASSIGNMENT

= Date Code*

= Pb−Free Package

(Pb−Free)

Package

SOT−23

Publication Order Number:

Cathode

Anode

Gate

MARKING

DIAGRAM

3000/Tape & Reel

C2B MG

Shipping

NYC0102BL/D

†

Related parts for NYC0102BLT1G

NYC0102BLT1G Summary of contents

Page 1

... Symbol Max Unit P D 225 mW R 380 °C/W qJA NYC0102BLT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com 0.25 AMP, 200 VOLT SCRs MARKING ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Peak Repetitive Forward Blocking Current (V = 200 kW) DRM GK Peak Repetitive Reverse Blocking Current (V = 200 kW) DRM GK ON CHARACTERISTICS Peak Forward On−State ...

Page 3

I , AVERAGE CURRENT (A) T Figure 1. Maximum Average Power vs. Average Current 100 NUMBER OF CYCLES Figure 3. Surge ...

Page 4

Gate 1.5 Open 0.5 0 200 250 300 T , (K) J Figure 7. Gate Trigger Current vs. T (Normalized to 255C 5 ...

Page 5

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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