NYC228STT1G ON Semiconductor, NYC228STT1G Datasheet

NYC228STT1G

Manufacturer Part Number

NYC228STT1G

Description

SCR 1.5A 600V SOT-223

Manufacturer

ON Semiconductor

Datasheet

1.NYC222STT1G.pdf (5 pages)

Specifications of NYC228STT1G

Scr Type

Sensitive Gate

Voltage - Off State

600V

Voltage - Gate Trigger (vgt) (max)

800mV

Voltage - On State (vtm) (max)

1.7V

Current - On State (it (rms)) (max)

1.5A

Current - Gate Trigger (igt) (max)

200µA

Current - Hold (ih) (max)

5mA

Current - Off State (max)

10µA

Current - Non Rep. Surge 50, 60hz (itsm)

15A @ 60Hz

Operating Temperature

-40°C ~ 110°C

Mounting Type

Surface Mount

Package / Case

SOT-223 (3 leads + Tab), SC-73, TO-261

Current - On State (it (rms) (max)

1.5A

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - On State (it (av)) (max)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NYC228STT1G

Manufacturer:

Quantity:

30 000

Current page: 1 of 5
Download datasheet (127Kb)

NYC222STT1G,

NYC226STT1G,

NYC228STT1G

Sensitive Gate

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

ignition, fuel ignitors, flash circuits, motor controls and low-power

switching applications.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. V

MAXIMUM RATINGS

July, 2008 − Rev. 0

Peak Repetitive Off−State Voltage (Note 1)

50 to 60 Hz, Gate Open)

On-State Current RMS

(180° Conduction Angles, T

Peak Non-repetitive Surge Current,

Circuit Fusing Considerations (t = 8.3 ms)

Forward Peak Gate Power

(Pulse Width ≤ 1.0 msec, T

Forward Average Gate Power

(t = 8.3 msec, T

Forward Peak Gate Current

(Pulse Width ≤ 1.0 ms, T

Reverse Peak Gate Voltage

(Pulse Width ≤ 1.0 ms, T

Operating Junction Temperature Range

@ Rated V

Storage Temperature Range

Designed and tested for repetitive peak operation required for CD

Blocking Voltage to 600 V

High Surge Current − 15 A

Very Low Forward “On” Voltage at High Current

Low-Cost Surface Mount SOT−223 Package

These are Pb−Free Devices

apply for zero or negative gate voltage; however, positive gate voltage shall

not be applied concurrent with negative potential on the anode. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

DRM

= 25°C, (1/2 Cycle, Sine Wave, 60 Hz)

= IK, T

and V

RRM

= *40 to +110°C, Sine Wave,

RRM

and V

= 25°C)

Rating

for all types can be applied on a continuous basis. Ratings

DRM

= 25°C)

= 25°C unless otherwise noted)

= 25°C)

= 80°C)

NYC222

NYC226

NYC228

Symbol

T(RMS)

G(AV)

FGM

DRM,

TSM

RRM

RGM

stg

−40 to +110

−40 to

Value

+150

400

600

1.5

0.9

0.5

0.1

0.2

5.0

Unit

°C

NYC222STT1G

NYC226STT1G

NYC228STT1G

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Device

(Note: Microdot may be in either loca-

tion)

ORDERING INFORMATION

400 thru 600 VOLTS

XXXXX = Device Code

1.5 AMPERES RMS

http://onsemi.com

PIN ASSIGNMENT

CASE 318E

STYLE 11

SOT−223

(Pb−Free)

= Assembly Location

= Year

= Work Week

= Pb−Free Package

SOT−223

Package

SCRs

Publication Order Number:

K (Cathode)

A (Anode)

G (Gate)

1000 /Tape & Reel

MARKING

DIAGRAM

XXXXXG

AYW

Shipping

NYC222/D

†

Related parts for NYC228STT1G

NYC228STT1G Summary of contents

Page 1

... J Device T −40 to °C stg +150 NYC222STT1G NYC226STT1G NYC228STT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com SCRs 1.5 AMPERES RMS 400 thru 600 VOLTS ...

Page 2

THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient PCB Mounted Thermal Resistance, Junction−to−Tab Measured on MT2 Tab Adjacent to Epoxy Maximum Device Temperature for Soldering Purposes for 10 Secs Maximum ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current ...

Page 3

CONDUCTION ANGLE 0.2 0.4 0.6 0.8 1.0 1 AVERAGE ON‐STATE CURRENT (AMPS) T(AV) Figure 1. Maximum Case Temperature 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 ...

Page 4

T , JUNCTION TEMPERATURE (°C) J Figure 5. Typical Gate Trigger Voltage 10 ...

Page 5

... A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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