MCR12DCMT4G ON Semiconductor, MCR12DCMT4G Datasheet

MCR12DCMT4G

Manufacturer Part Number

MCR12DCMT4G

Description

THYRISTOR SCR 12A 600V DPAK

Manufacturer

ON Semiconductor

Type

SCRr

Datasheet

1.MCR12DCNT4G.pdf (5 pages)

Specifications of MCR12DCMT4G

Scr Type

Standard Recovery

Voltage - Off State

600V

Voltage - Gate Trigger (vgt) (max)

Voltage - On State (vtm) (max)

1.9V

Current - On State (it (av)) (max)

7.8A

Current - On State (it (rms)) (max)

12A

Current - Gate Trigger (igt) (max)

20mA

Current - Hold (ih) (max)

40mA

Current - Off State (max)

10µA

Current - Non Rep. Surge 50, 60hz (itsm)

100A @ 60Hz

Operating Temperature

-40°C ~ 125°C

Mounting Type

Surface Mount

Package / Case

DPak, TO-252 (2 leads+tab), SC-63

Current - On State (it (rms) (max)

12A

Repetitive Peak Off-state Volt

600V

Off-state Voltage

600V

Average On-state Current

7.8A

Hold Current

40mA

Gate Trigger Current (max)

20mA

Gate Trigger Voltage (max)

Package Type

DPAK

Peak Repeat Off Current

10uA

Peak Surge On-state Current (max)

100A

On State Voltage(max)

1.9@20AV

Mounting

Surface Mount

Pin Count

2 +Tab

Operating Temp Range

-40C to 125C

Operating Temperature Classification

Automotive

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

MCR12DCMT4GOS
MCR12DCMT4GOS
MCR12DCMT4GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MCR12DCMT4G

Manufacturer:

ON Semiconductor

Quantity:

1 850

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MCR12DCMT4G

Manufacturer:

Quantity:

12 500

Company:

Meier Automation Equipment Co., Limited

Part Number:

MCR12DCMT4G

Manufacturer:

ON/安森美

Quantity:

20 000

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MCR12DCM, MCR12DCN

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

applications such as motor control; process control; temperature, light

and speed control.

Features

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. V

MAXIMUM RATINGS

February, 2006 − Rev. 5

Peak Repetitive Off−State Voltage (Note 1)

Gate Open)

On−State RMS Current

(180° Conduction Angles; T

Average On−State Current

(180° Conduction Angles; T

Peak Non-Repetitive Surge Current

(1/2 Cycle, Sine Wave 60 Hz, T

Circuit Fusing Consideration (t = 8.3 msec)

Forward Peak Gate Power

(Pulse Width ≤ 1.0 msec, T

Forward Average Gate Power

(t = 8.3 msec, T

Forward Peak Gate Current

(Pulse Width ≤ 1.0 msec, T

Operating Junction Temperature Range

Storage Temperature Range

Designed for high volume, low cost, industrial and consumer

Small Size

Passivated Die for Reliability and Uniformity

Low Level Triggering and Holding Characteristics

Epoxy Meets UL 94 V−0 @ 0.125 in

ESD Ratings: Human Body Model, 3B u 8000 V

Pb−Free Packages are Available

or negative gate voltage; positive gate voltage shall not be applied concurrent

with negative potential on the anode. Blocking voltages shall not be tested

with a constant current source such that the voltage ratings of the device are

exceeded.

= −40 to 125°C, Sine Wave, 50 to 60 Hz,

DRM

for all types can be applied on a continuous basis. Ratings apply for zero

= 90°C)

Rating

Machine Model, C u 400 V

MCR12DCM

MCR12DCN

= 25°C unless otherwise noted)

= 90°C)

Preferred Device

= 90°C)

= 125°C)

Symbol

T(RMS)

T(AV)

TSM

G(AV)

DRM,

RRM

stg

−40 to 125

−40 to 150

Value

600

800

100

7.8

5.0

0.5

2.0

Unit

°C

sec

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

R12DCx

ORDERING INFORMATION

12 AMPERES RMS

600 − 800 VOLTS

MARKING DIAGRAM

http://onsemi.com

PIN ASSIGNMENT

1 2

CASE 369C

= Year

= Work Week

= Device Code

= Pb−Free Package

SCRs

STYLE 4

DPAK

2DCxG

x= M or N

YWW

Publication Order Number:

Cathode

Anode

Gate

MCR12DCM/D

Related parts for MCR12DCMT4G

MCR12DCMT4G Summary of contents

Page 1

MCR12DCM, MCR12DCN Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features • Small Size • Passivated Die for Reliability ...

Page 2

... Pulse Test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%. ORDERING INFORMATION Device MCR12DCMT4 MCR12DCMT4G MCR12DCNT4 MCR12DCNT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ...

Page 3

Voltage Current Characteristic of SCR Symbol Parameter V Peak Repetitive Off−State Forward Voltage DRM I Peak Forward Blocking Current DRM V Peak Repetitive Off−State Reverse Voltage RRM I Peak Reverse Blocking Current RRM V Peak On−State Voltage TM I Holding ...

Page 4

T , JUNCTION TEMPERATURE (°C) J Figure 5. Typical Gate Trigger Current versus Junction Temperature 100 10 1.0 −40 −25 −10 5 JUNCTION ...

Page 5

... G 0.13 (0.005) *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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