MCR12DSNT4G ON Semiconductor, MCR12DSNT4G Datasheet - Page 5

• Manufacturer Part Number: MCR12DSNT4G
• Description: THYRISTOR SCR 12A 800V DPAK
• Manufacturer: ON Semiconductor
• Type: SCRr

Specifications of MCR12DSNT4G

• Scr Type: Sensitive Gate
• Voltage - Off State: 800V
• Voltage - Gate Trigger (vgt) (max): 1V
• Voltage - On State (vtm) (max): 1.9V
• Current - On State (it (av)) (max): 7.6A
• Current - On State (it (rms)) (max): 12A
• Current - Gate Trigger (igt) (max): 200µA
• Current - Hold (ih) (max): 6mA
• Current - Off State (max): 10µA
• Current - Non Rep. Surge 50, 60hz (itsm): 100A @ 60Hz
• Operating Temperature: -40°C ~ 110°C
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Current - On State (it (rms) (max): 12A
• Repetitive Peak Off-state Volt: 800V
• Off-state Voltage: 800V
• Average On-state Current: 7.6A
• Hold Current: 6mA
• Gate Trigger Current (max): 200uA
• Gate Trigger Voltage (max): 1V
• Peak Reverse Gate Voltage: 18V
• Package Type: DPAK
• Peak Repeat Off Current: 10uA
• Peak Surge On-state Current (max): 100A
• On State Voltage(max): 1.9@20AV
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Operating Temp Range: -40C to 110C
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MCR12DSNT4G; MCR12DSNT4GOSTR

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
MCR12DSMT4
MCR12DSMT4G
MCR12DSN−001
MCR12DSN−001G
MCR12DSNT4
MCR12DSNT4G
1000
100
8.0
6.0
4.0
2.0
1.0
10
10
0
100
100
Gate−Cathode Resistance and Peak Voltage
V
Figure 11. Exponential Static dv/dt versus
I
GT
PK
400 V
600 V
= 10 mA
= 800 V
Device
I
GT
Figure 9. Holding Current versus
R
R
GK
GK
= 25 mA
, GATE-CATHODE RESISTANCE (OHMS)
, GATE-CATHODE RESISTANCE (OHMS)
Gate−Cathode Resistance
1000
Package Type
(Pb−Free)
(Pb−Free)
(Pb−Free)
DPAK−3
DPAK−3
DPAK
DPAK
DPAK
DPAK
T
J
T
J
= 110°C
= 25°C
http://onsemi.com
1000
10 K
5
1000
1000
100
100
1.0
1.0
10
10
100
100
Package
Gate−Cathode Resistance and Gate Trigger
Figure 12. Exponential Static dv/dt versus
369C
369C
369D
369D
369C
369C
Figure 10. Exponential Static dv/dt versus
I
I
GT
GT
Gate−Cathode Resistance and Junction
= 25 mA
= 10 mA
R
R
GK
GK
, GATE-CATHODE RESISTANCE (OHMS)
, GATE-CATHODE RESISTANCE (OHMS)
Current Sensitivity
T
J
70°C
90°C
= 110°C
Temperature
2500 / Tape & Reel
2500 / Tape & Reel
2500 / Tape & Reel
2500 / Tape & Reel
75 Units / Rail
75 Units / Rail
Shipping
V
T
†
D
J
= 110°C
= 800 V
1000
1000