MCR8DSNT4G ON Semiconductor, MCR8DSNT4G Datasheet

MCR8DSNT4G

Manufacturer Part Number

MCR8DSNT4G

Description

THYRISTOR SCR 8A 800V DPAK-4

Manufacturer

ON Semiconductor

Datasheet

1.MCR8DSMT4G.pdf (6 pages)

Specifications of MCR8DSNT4G

Scr Type

Sensitive Gate

Voltage - Off State

800V

Voltage - Gate Trigger (vgt) (max)

Voltage - On State (vtm) (max)

1.8V

Current - On State (it (av)) (max)

5.1A

Current - On State (it (rms)) (max)

Current - Gate Trigger (igt) (max)

200µA

Current - Hold (ih) (max)

6mA

Current - Off State (max)

10µA

Current - Non Rep. Surge 50, 60hz (itsm)

90A @ 60Hz

Operating Temperature

-40°C ~ 110°C

Mounting Type

Surface Mount

Package / Case

DPak, TO-252 (2 leads+tab), SC-63

Current - On State (it (rms) (max)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MCR8DSNT4G

Manufacturer:

Quantity:

12 500

Company:

Meier Automation Equipment Co., Limited

Part Number:

MCR8DSNT4G

Manufacturer:

ON/安森美

Quantity:

20 000

Current page: 1 of 6
Download datasheet (117Kb)

MCR8DSM, MCR8DSN

Sensitive Gate

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

applications such as motor control; process control; temperature, light

and speed control.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. V

MAXIMUM RATINGS

October, 2010 − Rev. 7

Peak Repetitive Off−State Voltage (Note 1)

60 Hz)

On−State RMS Current

(180° Conduction Angles; T

Average On−State Current

(180° Conduction Angles; T

Peak Non-Repetitive Surge Current

(1/2 Cycle, Sine Wave 60 Hz, T

Circuit Fusing Consideration (t = 8.3 msec)

Forward Peak Gate Power

(Pulse Width ≤ 10 msec, T

Forward Average Gate Power

(t = 8.3 msec, T

Forward Peak Gate Current

(Pulse Width ≤ 10 msec, T

Operating Junction Temperature Range

Storage Temperature Range

Designed for high volume, low cost, industrial and consumer

Surface Mount Lead Form − Case 369C

Miniature Plastic Package − Straight Leads − Case 369

Small Size

Passivated Die for Reliability and Uniformity

Low Level Triggering and Holding Characteristics

Available in Two Package Styles

Epoxy Meets UL 94 V−0 @ 0.125 in

ESD Ratings:

Pb−Free Packages are Available

apply for negative gate voltage; positive gate voltage shall not be applied

concurrent with negative potential on the anode. Blocking voltages shall not

be tested with a constant current source such that the voltage ratings of the

device are exceeded.

DRM

= −40 to 110°C, Sine Wave, 50 Hz to

and V

RRM

= 90°C)

Rating

for all types can be applied on a continuous basis. Ratings

Human Body Model, 3B u 8000 V

Machine Model, C u 400 V

= 25°C unless otherwise noted)

= 90°C)

Preferred Device

= 90°C)

MCR8DSM

MCR8DSN

= 110°C)

Symbol

T(RMS)

T(AV)

TSM

G(AV)

DRM,

RRM

stg

−40 to 150

−40 to 110

Value

600

800

8.0

5.1

5.0

0.5

2.0

Unit

°C

sec

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

1 2

ORDERING INFORMATION

CR8DSx = Device Code

8 AMPERES RMS

600 − 800 VOLTS

http://onsemi.com

PIN ASSIGNMENT

CASE 369C

STYLE 4

DPAK

= Year

= Work Week

= Pb−Free Package

SCRs

x= M or N

Publication Order Number:

Cathode

Anode

Gate

MARKING

DIAGRAM

MCR8DSM/D

YWW

8DSxG

Related parts for MCR8DSNT4G

MCR8DSNT4G Summary of contents

Page 1

MCR8DSM, MCR8DSN Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features • Small Size • Passivated Die ...

Page 2

... Pulse Test; Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2 current not included in measurements. GK ORDERING INFORMATION Device MCR8DSMT4 MCR8DSMT4G MCR8DSNT4 MCR8DSNT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/ 25°C unless otherwise noted 25° 110° ...

Page 3

Voltage Current Characteristic of SCR Symbol Parameter V Peak Repetitive Off−State Forward Voltage DRM I Peak Forward Blocking Current DRM V Peak Repetitive Off−State Reverse Voltage RRM I Peak Reverse Blocking Current RRM V Peak On−State Voltage TM I Holding ...

Page 4

TYPICAL @ T = 25°C J MAXIMUM @ T 10 MAXIMUM @ T = 25°C J 1.0 0.1 0 1.0 2.0 3 INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) T Figure 3. On−State Characteristics 1000 100 GATE OPEN 10 1.0 ...

Page 5

100 1000 R , GATE-CATHODE RESISTANCE (OHMS) GK Figure 9. Holding Current versus Gate−Cathode Resistance 1000 400 V 100 600 800 ...

Page 6

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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