THYRISTOR SCR 12A 50V TO-220AB

 

2N6394G

Manufacturer Part Number2N6394G
DescriptionTHYRISTOR SCR 12A 50V TO-220AB
ManufacturerON Semiconductor
2N6394G datasheets

Availability: In stock

International delivery:

Warranty: 60 days

Shipping & payment terms

Added to cart

 

Specifications of 2N6394G

Scr TypeStandard RecoveryVoltage - Off State50V
Voltage - Gate Trigger (vgt) (max)1.5VVoltage - On State (vtm) (max)2.2V
Current - On State (it (rms)) (max)12ACurrent - Gate Trigger (igt) (max)30mA
Current - Hold (ih) (max)50mACurrent - Off State (max)10µA
Current - Non Rep. Surge 50, 60hz (itsm)100A @ 60HzOperating Temperature-40°C ~ 125°C
Mounting TypeThrough HolePackage / CaseTO-220-3 (Straight Leads)
Current - On State (it (rms) (max)12ALead Free Status / RoHS StatusLead free / RoHS Compliant
Current - On State (it (av)) (max)-  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
Page 1/5

Download datasheet (86Kb)Embed
Next
2N6394 Series
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half‐wave ac control applications, such as
motor controls, heating controls and power supplies.
Features
Glass Passivated Junctions with Center Gate Geometry for Greater
Parameter Uniformity and Stability
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Blocking Voltage to 800 V
Pb-Free Packages are Available*
† (T
MAXIMUM RATINGS
= 25 C unless otherwise noted)
J
Rating
Peak Repetitive Off-State Voltage (Note 1)
(T
= -40 to 125 C, Sine Wave,
J
50 to 60 Hz, Gate Open)
2N6394
2N6395
2N6397
2N6399
On‐State RMS Current
(180 Conduction Angles; T
= 90 C)
C
Peak Non‐Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz, T
= 90 C)
J
Circuit Fusing (t = 8.3 ms)
Forward Peak Gate Power
1.0 ms, T
(Pulse Width
= 90 C)
C
Forward Average Gate Power
(t = 8.3 ms, T
= 90 C)
C
Forward Peak Gate Current
1.0 ms, T
(Pulse Width
= 90 C)
C
Operating Junction Temperature Range
Storage Temperature Range
† (T
MAXIMUM RATINGS
= 25 C unless otherwise noted)
J
Rating
Thermal Resistance, Junction-to-Case
Maximum Lead Temperature for Soldering
Purposes 1/8 from Case for 10 Seconds
†Indicates JEDEC Registered Data
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
and V
for all types can be applied on a continuous basis. Ratings
DRM
RRM
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2008
April, 2008 - Rev. 7
Symbol
Value
Unit
V
V
DRM,
V
RRM
50
100
400
800
I
12
A
T(RMS)
I
100
A
TSM
2
2
I
t
40
A
s
P
20
W
1
GM
P
0.5
W
G(AV)
I
2.0
A
GM
T
-40 to +125
C
J
T
-40 to +150
C
stg
Symbol
Max
Unit
R
2.0
C/W
qJC
T
260
C
L
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
1
http://onsemi.com
SCRs
12 AMPERES RMS
50 thru 800 VOLTS
G
A
K
MARKING
DIAGRAM
4
TO-220AB
2N639xG
CASE 221A
AYWW
STYLE 3
2
3
2N639x = Device Code
x = 4, 5, 7, or 9
G
= Pb-Free Package
A
= Assembly Location
Y
= Year
WW
= Work Week
PIN ASSIGNMENT
1
Cathode
2
Anode
3
Gate
4
Anode
ORDERING INFORMATION
Publication Order Number:
2N6394/D

2N6394G Summary of contents

  • Page 1

    ... Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2008 April, 2008 - Rev ...

  • Page 2

    ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS †Peak Repetitive Forward or Reverse Blocking Current (V = Rated Gate Open) AK DRM RRM ON CHARACTERISTICS †Peak Forward On-State Voltage (Note 2) (I †Gate Trigger Current (Continuous dc) (V † ...

  • Page 3

    7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.4 1.2 2.0 2.8 3 INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) TH Figure 3. On-State Characteristics 1.0 0.7 0.5 ...

  • Page 4

    ... T , JUNCTION TEMPERATURE ( C) J Figure 8. Typical Gate Trigger Voltage versus Temperature ORDERING INFORMATION Device 2N6394 2N6394G 2N6395 2N6395G 2N6397 2N6397G 2N6399 2N6399G 2N6399TG **For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D ...

  • Page 5

    ... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT:  Literature Distribution Center for ON Semiconductor  P.O. Box 5163, Denver, Colorado 80217 USA  Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada  Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada   ...