MCR08MT1 ON Semiconductor, MCR08MT1 Datasheet

MCR08MT1

Manufacturer Part Number

MCR08MT1

Description

THYRISTOR SCR 0.8A 600V SOT223

Manufacturer

ON Semiconductor

Datasheet

1.MCR08BT1G.pdf (6 pages)

Specifications of MCR08MT1

Scr Type

Sensitive Gate

Voltage - Off State

600V

Voltage - Gate Trigger (vgt) (max)

800mV

Voltage - On State (vtm) (max)

1.7V

Current - On State (it (rms)) (max)

800mA

Current - Gate Trigger (igt) (max)

200µA

Current - Hold (ih) (max)

5mA

Current - Off State (max)

10µA

Current - Non Rep. Surge 50, 60hz (itsm)

8A @ 60Hz

Operating Temperature

-40°C ~ 110°C

Mounting Type

Surface Mount

Package / Case

SOT-223 (3 leads + Tab), SC-73, TO-261

Current - On State (it (rms) (max)

800mA

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Current - On State (it (av)) (max)

Other names

MCR08MT1OSCT

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MCR08MT1

Manufacturer:

Quantity:

930

Company:

H&T Electronics

Part Number:

MCR08MT1

Quantity:

2 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MCR08MT1G

Manufacturer:

Quantity:

30 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

MCR08MT1G

Manufacturer:

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Quantity:

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Current page: 1 of 6
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MCR08B, MCR08M

Sensitive Gate

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

such as relay and lamp drivers, small motor controls, gate drivers for

larger thyristors, and sensing and detection circuits. Supplied in

surface mount package for use in automated manufacturing.

Features

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. V

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

November, 2008 − Rev. 6

Peak Repetitive Off−State Voltage (Note 1)

(Sine Wave, R

On-State Current RMS

(All Conduction Angles; T

Peak Non-repetitive Surge Current

(1/2 Cycle Sine Wave, 60 Hz, T

Circuit Fusing Considerations (t = 8.3 ms)

Forward Peak Gate Power

Average Gate Power

Operating Junction Temperature Range

Storage Temperature Range

Thermal Resistance, Junction−to−Ambient

PCB Mounted per Figure 1

Thermal Resistance, Junction−to−Tab

Measured on Anode Tab Adjacent to Epoxy

Maximum Device Temperature for Solder-

ing Purposes (for 10 Seconds Maximum)

PNPN devices designed for line powered consumer applications

Sensitive Gate Trigger Current

Blocking Voltage to 600 V

Glass Passivated Surface for Reliability and Uniformity

Surface Mount Package

Pb−Free Packages are Available

Semiconductor Components Industries, LLC, 2008

apply for zero or negative gate voltage; however, positive gate voltage shall

not be applied concurrent with negative potential on the anode. Blocking

voltages shall not be tested with a constant source such that the voltage

ratings of the devices are exceeded.

= 25 to 110 C)

DRM

= 80 C, t = 1.0 ms)

= 80 C, t = 8.3 ms)

and V

RRM

= 1 kW

Rating

for all types can be applied on a continuous basis. Ratings

= 80 C)

= 25 C unless otherwise noted)

Preferred Device

MCR08BT1

MCR08MT1

= 25 C)

Symbol

T(RMS)

TSM

G(AV)

DRM,

RRM

stg

qJA

qJT

−40 to +110

−40 to +150

Value

0.01

200

600

156

260

0.8

8.0

0.4

0.1

Unit

C/W

†For information on tape and reel specifications,

Preferred devices are recommended choices for future use

and best overall value.

MCR08BT1

MCR08BT1G

MCR08MT1

MCR08MT1G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Device

(Note: Microdot may be in either location)

ORDERING INFORMATION

200 thru 600 VOLTS

0.8 AMPERES RMS

CR08x = Device Code

http://onsemi.com

PIN ASSIGNMENT

CASE 318E

STYLE 10

SOT−223

(Pb−Free)

SOT−223

(Pb−Free)

Package

SOT−223

= Assembly Location

= Year

= Work Week

= Pb−Free Package

x = B or M

SCRs

Publication Order Number:

Cathode

Anode

Gate

1000/Tape & Reel

1000/Tape &Reel

Shipping

MARKING

DIAGRAM

MCR08BT1/D

CR08x G

AYW

†

Related parts for MCR08MT1

MCR08MT1 Summary of contents

Page 1

... C/W qJT MCR08BT1G T 260 C L MCR08MT1 MCR08MT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. 1 http://onsemi ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (Note Rated DRM RRM GK ON CHARACTERISTICS Peak Forward On-State Voltage (Note 2) (I Gate Trigger ...

Page 3

INSTANTANEOUS ON‐STATE VOLTAGE (VOLTS) T Figure 2. On-State Characteristics 110 100 HALFWAVE 0.1 0.2 ...

Page 4

CONDUCTION 60 ANGLE 0.7 0.6 90 0.5 0.4 0.3 0.2 120 0 0.1 0.2 0 AVERAGE ON‐STATE CURRENT (AMPS) T(AV) Figure 8. Power Dissipation 0.7 0.6 0.5 0.4 0.3 -40 -20 ...

Page 5

I GT 1.0 0.1 1.0 10 100 1000 R , GATE‐CATHODE RESISTANCE (OHMS) GK Figure 14. Holding Current Range versus Gate-Cathode Resistance 10000 300 V 1000 200 V 500 400 V 100 50 500 V ...

Page 6

... A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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